Abstract
A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 385-391 |
| Number of pages | 7 |
| Volume | 341 |
| Publication status | Published - 1994 |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 5 1994 → Apr 7 1994 |
Other
| Other | Proceedings of the 1994 MRS Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/5/94 → 4/7/94 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. / Auciello, Orlando; Krauss, A. R.; Lin, Y.; Chang, Robert P. H.; Gruen, D. M.
Materials Research Society Symposium - Proceedings. Vol. 341 Materials Research Society, 1994. p. 385-391.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique
AU - Auciello, Orlando
AU - Krauss, A. R.
AU - Lin, Y.
AU - Chang, Robert P. H.
AU - Gruen, D. M.
PY - 1994
Y1 - 1994
N2 - A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
AB - A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.
UR - http://www.scopus.com/inward/record.url?scp=0028562204&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:0028562204
VL - 341
SP - 385
EP - 391
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -