In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique

Orlando Auciello, A. R. Krauss, Y. Lin, Robert P. H. Chang, D. M. Gruen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages385-391
Number of pages7
Volume341
Publication statusPublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 7 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/5/944/7/94

Fingerprint

Surface analysis
Oxides
Ion beams
Ferroelectric materials
Heterojunctions
Monolayers
Capacitors
Surface segregation
Atoms
Vacancies
Fatigue of materials
Spectroscopy
Scattering
Ions
Polarization
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Auciello, O., Krauss, A. R., Lin, Y., Chang, R. P. H., & Gruen, D. M. (1994). In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. In Materials Research Society Symposium - Proceedings (Vol. 341, pp. 385-391). Materials Research Society.

In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. / Auciello, Orlando; Krauss, A. R.; Lin, Y.; Chang, Robert P. H.; Gruen, D. M.

Materials Research Society Symposium - Proceedings. Vol. 341 Materials Research Society, 1994. p. 385-391.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Auciello, O, Krauss, AR, Lin, Y, Chang, RPH & Gruen, DM 1994, In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. in Materials Research Society Symposium - Proceedings. vol. 341, Materials Research Society, pp. 385-391, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/5/94.
Auciello O, Krauss AR, Lin Y, Chang RPH, Gruen DM. In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. In Materials Research Society Symposium - Proceedings. Vol. 341. Materials Research Society. 1994. p. 385-391
Auciello, Orlando ; Krauss, A. R. ; Lin, Y. ; Chang, Robert P. H. ; Gruen, D. M. / In situ, real-time analysis of the growth of ferroelectric and conductive oxide heterostructures by a new time-of-flight pulsed ion beam surface analysis technique. Materials Research Society Symposium - Proceedings. Vol. 341 Materials Research Society, 1994. pp. 385-391
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