Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 /SiC interface

John Rozen, Sarit Dhar, S. K. Dixit, V. V. Afanas'Ev, F. O. Roberts, H. L. Dang, Sanwu Wang, S. T. Pantelides, J. R. Williams, L. C. Feldman

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Abstract

Nitrogen incorporation at the SiO2 /SiC interface via high temperature nitric oxide annealing leads to the passivation of electrically active interface defects, yielding improved inversion mobility in the semiconductor. However, we find that such nitrided oxides can possess a larger density of hole traps than as-grown oxides, which is detrimental to the reliability of devices (e.g., can lead to large threshold voltage instabilities and to accelerated failure). Three different charge injection techniques are used to characterize this phenomenon in metal-oxide-semiconductor structures: x-ray irradiation, internal photoemission and Fowler-Nordheim tunneling. Some nitrogen-based atomic configurations that could act as hole traps in nitrided SiO2 are discussed based on first-principles density functional calculations.

Original languageEnglish
Article number124513
JournalJournal of Applied Physics
Volume103
Issue number12
DOIs
Publication statusPublished - Jul 10 2008

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rozen, J., Dhar, S., Dixit, S. K., Afanas'Ev, V. V., Roberts, F. O., Dang, H. L., Wang, S., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2008). Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 /SiC interface. Journal of Applied Physics, 103(12), [124513]. https://doi.org/10.1063/1.2940736