Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 /SiC interface

John Rozen, Sarit Dhar, S. K. Dixit, V. V. Afanas'Ev, F. O. Roberts, H. L. Dang, Sanwu Wang, S. T. Pantelides, J. R. Williams, L. C. Feldman

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Physics & Astronomy