Increase in the figure of merit by cd-substitution in Sn 1-x Pb x Te and effect of pb/sn ratio on thermoelectric properties

Mi Kyung Han, Xiaoyuen Zhou, Ctirad Uher, Sung Jin Kim, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effects of Cd-doping on the thermoelectric properties of Sn 1-x Pb x Te are investigated and compared to the properties of the corresponding Sn 1-x Pb x Te solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn 1-x Pb x Te. A signifi cant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher fi gure of merit (ZT) for (Sn 1-x Pb x ) 0.97 Cd 0.03 Te than that of undoped Sn 1-x Pb x Te. The maximum ZT ( ̃ 0.7) values are observed for p-type material with x = 0.36 at 560 K. Much higher values (ZT ̃ 1.2 at 560 K for x = 0.73) are obtained on n-type samples.

Original languageEnglish
Pages (from-to)1218-1225
Number of pages8
JournalAdvanced Energy Materials
Volume2
Issue number10
DOIs
Publication statusPublished - Oct 2012

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Substitution reactions
Carrier concentration
Solid solutions
Thermal conductivity
Physical properties
Doping (additives)
cadmium telluride

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Increase in the figure of merit by cd-substitution in Sn 1-x Pb x Te and effect of pb/sn ratio on thermoelectric properties. / Han, Mi Kyung; Zhou, Xiaoyuen; Uher, Ctirad; Kim, Sung Jin; Kanatzidis, Mercouri G.

In: Advanced Energy Materials, Vol. 2, No. 10, 10.2012, p. 1218-1225.

Research output: Contribution to journalArticle

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