Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy

Olga Kraynis, Ellen Wachtel, Igor Lubomirsky, Tsachi Livneh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F 2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x=0.05, at all locations monitored post-annealing, the F 2g frequency continued to increase during two weeks and for x=0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.

Original languageEnglish
JournalScripta Materialia
DOIs
Publication statusAccepted/In press - Dec 11 2016

Fingerprint

Cerium compounds
Raman spectroscopy
X ray diffraction
Time and motion study
Defect structures
diffraction
Annealing
Thin films
Mechanical properties
x rays
histories
mechanical properties
annealing
defects
thin films
cells

Keywords

  • Anelastic relaxation
  • Gd-doped ceria
  • Raman spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Inelastic relaxation in Gd-doped ceria films : Micro-Raman spectroscopy. / Kraynis, Olga; Wachtel, Ellen; Lubomirsky, Igor; Livneh, Tsachi.

In: Scripta Materialia, 11.12.2016.

Research output: Contribution to journalArticle

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