Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy

Olga Kraynis, Ellen Wachtel, Igor Lubomirsky, Tsachi Livneh

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.

Original languageEnglish
Pages (from-to)123-126
Number of pages4
JournalScripta Materialia
Publication statusPublished - Aug 2017


  • Anelastic relaxation
  • Gd-doped ceria
  • Raman spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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