Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Guotong Du; Jinzhong Wang; Xinqiang Wang; Xiuying Jiang; Shuren Yang; Yan Ma; Wei Yan; Dingsan Gao; Xiang Liu; Hui Cao; Junying Xu; R. P.H. Chang

doi:10.1016/S0042-207X(02)00538-9

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Guotong Du, Jinzhong Wang, Xinqiang Wang, Xiuying Jiang, Shuren Yang, Yan Ma, Wei Yan, Dingsan Gao, Xiang Liu, Hui Cao, Junying Xu, R. P.H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ₅ and Γ₆ free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

Original language	English
Pages (from-to)	473-476
Number of pages	4
Journal	Vacuum
Volume	69
Issue number	4
DOIs	https://doi.org/10.1016/S0042-207X(02)00538-9
Publication status	Published - Jan 24 2003

Keywords

Optical transmission
PL
Plasma-assisted MOCVD
XRD

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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title = "Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD",

abstract = "ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.",

keywords = "Optical transmission, PL, Plasma-assisted MOCVD, XRD",

author = "Guotong Du and Jinzhong Wang and Xinqiang Wang and Xiuying Jiang and Shuren Yang and Yan Ma and Wei Yan and Dingsan Gao and Xiang Liu and Hui Cao and Junying Xu and Chang, {R. P.H.}",

note = "Funding Information: This work is supported by National Science Foundation of China (Grant Nos. 59910161983, 60176026 and 60177007). ",

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doi = "10.1016/S0042-207X(02)00538-9",

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T1 - Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

AU - Du, Guotong

AU - Wang, Jinzhong

AU - Wang, Xinqiang

AU - Jiang, Xiuying

AU - Yang, Shuren

AU - Ma, Yan

AU - Yan, Wei

AU - Gao, Dingsan

AU - Liu, Xiang

AU - Cao, Hui

AU - Xu, Junying

AU - Chang, R. P.H.

N1 - Funding Information: This work is supported by National Science Foundation of China (Grant Nos. 59910161983, 60176026 and 60177007).

PY - 2003/1/24

Y1 - 2003/1/24

N2 - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

AB - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

KW - Optical transmission

KW - PL

KW - Plasma-assisted MOCVD

KW - XRD

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DO - 10.1016/S0042-207X(02)00538-9

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EP - 476

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 4

ER -

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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