Abstract
ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 473-476 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 69 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 24 2003 |
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Keywords
- Optical transmission
- PL
- Plasma-assisted MOCVD
- XRD
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD. / Du, Guotong; Wang, Jinzhong; Wang, Xinqiang; Jiang, Xiuying; Yang, Shuren; Ma, Yan; Yan, Wei; Gao, Dingsan; Liu, Xiang; Cao, Hui; Xu, Junying; Chang, Robert P. H.
In: Vacuum, Vol. 69, No. 4, 24.01.2003, p. 473-476.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD
AU - Du, Guotong
AU - Wang, Jinzhong
AU - Wang, Xinqiang
AU - Jiang, Xiuying
AU - Yang, Shuren
AU - Ma, Yan
AU - Yan, Wei
AU - Gao, Dingsan
AU - Liu, Xiang
AU - Cao, Hui
AU - Xu, Junying
AU - Chang, Robert P. H.
PY - 2003/1/24
Y1 - 2003/1/24
N2 - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.
AB - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.
KW - Optical transmission
KW - PL
KW - Plasma-assisted MOCVD
KW - XRD
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UR - http://www.scopus.com/inward/citedby.url?scp=0037462257&partnerID=8YFLogxK
U2 - 10.1016/S0042-207X(02)00538-9
DO - 10.1016/S0042-207X(02)00538-9
M3 - Article
VL - 69
SP - 473
EP - 476
JO - Vacuum
JF - Vacuum
SN - 0042-207X
IS - 4
ER -