Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Guotong Du, Jinzhong Wang, Xinqiang Wang, Xiuying Jiang, Shuren Yang, Yan Ma, Wei Yan, Dingsan Gao, Xiang Liu, Hui Cao, Junying Xu, Robert P. H. Chang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

Original languageEnglish
Pages (from-to)473-476
Number of pages4
JournalVacuum
Volume69
Issue number4
DOIs
Publication statusPublished - Jan 24 2003

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Annealing
Light transmission
Plasmas
Thin films
annealing
Photoluminescence
thin films
Aluminum Oxide
Tensile strain
Sapphire
Excitons
photoluminescence
Substrates
sapphire
excitons
room temperature
Temperature

Keywords

  • Optical transmission
  • PL
  • Plasma-assisted MOCVD
  • XRD

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD. / Du, Guotong; Wang, Jinzhong; Wang, Xinqiang; Jiang, Xiuying; Yang, Shuren; Ma, Yan; Yan, Wei; Gao, Dingsan; Liu, Xiang; Cao, Hui; Xu, Junying; Chang, Robert P. H.

In: Vacuum, Vol. 69, No. 4, 24.01.2003, p. 473-476.

Research output: Contribution to journalArticle

Du, G, Wang, J, Wang, X, Jiang, X, Yang, S, Ma, Y, Yan, W, Gao, D, Liu, X, Cao, H, Xu, J & Chang, RPH 2003, 'Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD', Vacuum, vol. 69, no. 4, pp. 473-476. https://doi.org/10.1016/S0042-207X(02)00538-9
Du G, Wang J, Wang X, Jiang X, Yang S, Ma Y et al. Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD. Vacuum. 2003 Jan 24;69(4):473-476. https://doi.org/10.1016/S0042-207X(02)00538-9
Du, Guotong ; Wang, Jinzhong ; Wang, Xinqiang ; Jiang, Xiuying ; Yang, Shuren ; Ma, Yan ; Yan, Wei ; Gao, Dingsan ; Liu, Xiang ; Cao, Hui ; Xu, Junying ; Chang, Robert P. H. / Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD. In: Vacuum. 2003 ; Vol. 69, No. 4. pp. 473-476.
@article{62251fce491540499aa90f9477e59f04,
title = "Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD",
abstract = "ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.",
keywords = "Optical transmission, PL, Plasma-assisted MOCVD, XRD",
author = "Guotong Du and Jinzhong Wang and Xinqiang Wang and Xiuying Jiang and Shuren Yang and Yan Ma and Wei Yan and Dingsan Gao and Xiang Liu and Hui Cao and Junying Xu and Chang, {Robert P. H.}",
year = "2003",
month = "1",
day = "24",
doi = "10.1016/S0042-207X(02)00538-9",
language = "English",
volume = "69",
pages = "473--476",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "4",

}

TY - JOUR

T1 - Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

AU - Du, Guotong

AU - Wang, Jinzhong

AU - Wang, Xinqiang

AU - Jiang, Xiuying

AU - Yang, Shuren

AU - Ma, Yan

AU - Yan, Wei

AU - Gao, Dingsan

AU - Liu, Xiang

AU - Cao, Hui

AU - Xu, Junying

AU - Chang, Robert P. H.

PY - 2003/1/24

Y1 - 2003/1/24

N2 - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

AB - ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature for the sample annealed many times exhibited only one emitting peak at around 380 nm. However, we find Γ5 and Γ6 free exciton peaks in the sample annealed only one time after growth. At the same time, the optical transmission indicate that the maximum of the sample's transmission decreases against with the increasing of the c-axis length in ranges from 190 to 900 nm.

KW - Optical transmission

KW - PL

KW - Plasma-assisted MOCVD

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=0037462257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037462257&partnerID=8YFLogxK

U2 - 10.1016/S0042-207X(02)00538-9

DO - 10.1016/S0042-207X(02)00538-9

M3 - Article

AN - SCOPUS:0037462257

VL - 69

SP - 473

EP - 476

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 4

ER -