Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

Bei Chen, Rashmi Jha, Heather Lazar, Nivedita Biswas, Jaehoon Lee, Bongmook Lee, Leszek Wielunski, Eric Garfunkel, Veena Misra

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO2. A MoTa alloy metal gate with Ru capping exhibits stable effective work function up to 900 °C annealing but is not stable with W capping. Auger electron spectroscopy and Rutherford backscattering spectroscopy analyses show minimal oxygen diffusion into MoTa gate stacks with Ru capping while severe oxygen diffusion into the gate is observed with W capping metal after 900 °C annealing. Current-voltage analysis also demonstrates different barrier heights of MoTa on SiO2with Ru or W capping layer after 900 °C annealing, confirming the effective work function value change.

Original languageEnglish
Pages (from-to)228-230
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number4
DOIs
Publication statusPublished - Apr 2006

Fingerprint

Metals
Annealing
Oxygen
Electrodes
MOS capacitors
Rutherford backscattering spectroscopy
Auger electron spectroscopy
Electric potential

Keywords

  • Alloy
  • Capping
  • Effective work function
  • Metal gate
  • MoTa
  • Oxygen diffusion

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. / Chen, Bei; Jha, Rashmi; Lazar, Heather; Biswas, Nivedita; Lee, Jaehoon; Lee, Bongmook; Wielunski, Leszek; Garfunkel, Eric; Misra, Veena.

In: IEEE Electron Device Letters, Vol. 27, No. 4, 04.2006, p. 228-230.

Research output: Contribution to journalArticle

Chen, B, Jha, R, Lazar, H, Biswas, N, Lee, J, Lee, B, Wielunski, L, Garfunkel, E & Misra, V 2006, 'Influence of oxygen diffusion through capping layers of low work function metal gate electrodes', IEEE Electron Device Letters, vol. 27, no. 4, pp. 228-230. https://doi.org/10.1109/LED.2006.871184
Chen, Bei ; Jha, Rashmi ; Lazar, Heather ; Biswas, Nivedita ; Lee, Jaehoon ; Lee, Bongmook ; Wielunski, Leszek ; Garfunkel, Eric ; Misra, Veena. / Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 4. pp. 228-230.
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