INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY.

H. J. Gossmann, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High energy ion scattering channeling and low energy electron diffraction are used for an investigation of the initial stages of interface formation during Si homoepitaxy. We find a strong dependence of the atomic reordering - a necessary condition for pseudomorphic growth - on substrate surface, deposition temperature and Si coverage: (1) Si deposition at 300 K reorders the Si(100) substrate reconstruction in a layer by layer manner. In contrast Si(111) is unaffected by Si deposition at that temperature. This difference between Si(100) and Si(111) can be understood in terms of different structural models. (2) On both surfaces deposition at 300 K results in a disordered overlayer. (3) As a direct consequence of the dependence of the reordering on reconstruction we find a lower epitaxial temperature ( approximately equals 570 K) for Si(100) than for Si(111) ( approximately equals 790 K).

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages33-38
Number of pages6
Volume56
ISBN (Print)0931837219
Publication statusPublished - 1986

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Silicon
Molecular beam epitaxy
Low energy electron diffraction
Substrates
Temperature
Scattering
Ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gossmann, H. J., & Feldman, L. C. (1986). INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY. In Materials Research Society Symposia Proceedings (Vol. 56, pp. 33-38). Materials Research Soc.

INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY. / Gossmann, H. J.; Feldman, Leonard C.

Materials Research Society Symposia Proceedings. Vol. 56 Materials Research Soc, 1986. p. 33-38.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gossmann, HJ & Feldman, LC 1986, INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY. in Materials Research Society Symposia Proceedings. vol. 56, Materials Research Soc, pp. 33-38.
Gossmann HJ, Feldman LC. INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY. In Materials Research Society Symposia Proceedings. Vol. 56. Materials Research Soc. 1986. p. 33-38
Gossmann, H. J. ; Feldman, Leonard C. / INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY. Materials Research Society Symposia Proceedings. Vol. 56 Materials Research Soc, 1986. pp. 33-38
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