Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick, B. E. Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.

Original languageEnglish
Pages (from-to)1128-1131
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number9
DOIs
Publication statusPublished - 1990

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silicon films
chemical effects
boron
single crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Influence of surface reconstruction on the orientation of homoepitaxial silicon films. / Headrick, R. L.; Weir, B. E.; Bevk, J.; Freer, B. S.; Eaglesham, D. J.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 65, No. 9, 1990, p. 1128-1131.

Research output: Contribution to journalArticle

Headrick, R. L. ; Weir, B. E. ; Bevk, J. ; Freer, B. S. ; Eaglesham, D. J. ; Feldman, Leonard C. / Influence of surface reconstruction on the orientation of homoepitaxial silicon films. In: Physical Review Letters. 1990 ; Vol. 65, No. 9. pp. 1128-1131.
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