Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick; B. E. Weir; J. Bevk; B. S. Freer; D. J. Eaglesham; Leonard C Feldman

doi:10.1103/PhysRevLett.65.1128

Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick, B. E. Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, Leonard C Feldman

Rutgers University

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60 Citations (Scopus)

Abstract

Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.

Original language	English
Pages (from-to)	1128-1131
Number of pages	4
Journal	Physical Review Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.65.1128
Publication status	Published - 1990

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Headrick, R. L., Weir, B. E., Bevk, J., Freer, B. S., Eaglesham, D. J., & Feldman, L. C. (1990). Influence of surface reconstruction on the orientation of homoepitaxial silicon films. Physical Review Letters, 65(9), 1128-1131. https://doi.org/10.1103/PhysRevLett.65.1128

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AU - Eaglesham, D. J.

AU - Feldman, Leonard C

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10.1103/PhysRevLett.65.1128