Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick, B. E. Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, Leonard C Feldman

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Abstract

Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.

Original languageEnglish
Pages (from-to)1128-1131
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number9
DOIs
Publication statusPublished - 1990

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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