Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick; B. E. Weir; J. Bevk; B. S. Freer; D. J. Eaglesham; L. C. Feldman

doi:10.1103/PhysRevLett.65.1128

Influence of surface reconstruction on the orientation of homoepitaxial silicon films

R. L. Headrick, B. E. Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.

Original language	English
Pages (from-to)	1128-1131
Number of pages	4
Journal	Physical review letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.65.1128
Publication status	Published - 1990

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Physics and Astronomy(all)

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AU - Headrick, R. L.

AU - Weir, B. E.

AU - Bevk, J.

AU - Freer, B. S.

AU - Eaglesham, D. J.

AU - Feldman, L. C.

PY - 1990

Y1 - 1990

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AB - Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.

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Influence of surface reconstruction on the orientation of homoepitaxial silicon films

Abstract

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