Abstract
Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.
| Original language | English |
|---|---|
| Pages (from-to) | 1128-1131 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 65 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1990 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Influence of surface reconstruction on the orientation of homoepitaxial silicon films. / Headrick, R. L.; Weir, B. E.; Bevk, J.; Freer, B. S.; Eaglesham, D. J.; Feldman, Leonard C.
In: Physical Review Letters, Vol. 65, No. 9, 1990, p. 1128-1131.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of surface reconstruction on the orientation of homoepitaxial silicon films
AU - Headrick, R. L.
AU - Weir, B. E.
AU - Bevk, J.
AU - Freer, B. S.
AU - Eaglesham, D. J.
AU - Feldman, Leonard C
PY - 1990
Y1 - 1990
N2 - Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.
AB - Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.
UR - http://www.scopus.com/inward/record.url?scp=0000657493&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000657493&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.65.1128
DO - 10.1103/PhysRevLett.65.1128
M3 - Article
AN - SCOPUS:0000657493
VL - 65
SP - 1128
EP - 1131
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 9
ER -