Abstract
Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation.
| Original language | English |
|---|---|
| Pages (from-to) | 1128-1131 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 65 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1990 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Headrick, R. L., Weir, B. E., Bevk, J., Freer, B. S., Eaglesham, D. J., & Feldman, L. C. (1990). Influence of surface reconstruction on the orientation of homoepitaxial silicon films. Physical Review Letters, 65(9), 1128-1131. https://doi.org/10.1103/PhysRevLett.65.1128