Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

N. L. Rupesinghe, M. Chhowalla, G. A.J. Amaratunga, P. Weightman, D. Martin, P. Unsworth, J. Murray

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Abstract

In order to study the influence of the back barrier on the electron emission properties of tetrahedral amorphous carbon (ta-C), we have deposited identical films on p and n+ Si. The valence and conduction band offsets were measured for ta-C on p and n+ Si using in situ x-ray photoelectron spectroscopy and optical spectroscopy. From the band measurements it is shown that there is a substantial back barrier to emission. We show that for films having very similar properties, the electron emission can be influenced by the ta-C/Si heterojunction.

Original languageEnglish
Pages (from-to)1908-1910
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number12
DOIs
Publication statusPublished - Sep 18 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rupesinghe, N. L., Chhowalla, M., Amaratunga, G. A. J., Weightman, P., Martin, D., Unsworth, P., & Murray, J. (2000). Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si. Applied Physics Letters, 77(12), 1908-1910. https://doi.org/10.1063/1.1310623