Influence of weak links and oxygen deficiency on electrical properties of Bi-2212 and Ti-2212 HTS thin films

Jon L. Schindler, Frank DiMeo, Carolyn R. Duran, Bruce J. Hinds, Bruce W. Wessels, Tobin J Marks, Carl R. Kannewurf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of the Bi-2212 and Tl-2212 compounds were prepared by MOCVD deposition techniques. Resistivity versus temperature and critical current density measurements were used to characterize the electrical properties. An analysis of the data based on a proposed model determined the influence of intragranular weak links. Thin film samples in both systems with near optimum oxygen doping showed a correlation between the slope and magnitude of the resistivity in the normal state. Samples with reduced oxygen content displayed a strong increase in the intragrain boundary resistance, consistent with weak link defects. The results agree with a similar analysis of YBCO samples and support a common mechanism for the development of weak links in cuprates.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages315-320
Number of pages6
Volume401
Publication statusPublished - 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period11/27/9511/30/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Schindler, J. L., DiMeo, F., Duran, C. R., Hinds, B. J., Wessels, B. W., Marks, T. J., & Kannewurf, C. R. (1996). Influence of weak links and oxygen deficiency on electrical properties of Bi-2212 and Ti-2212 HTS thin films. In Materials Research Society Symposium - Proceedings (Vol. 401, pp. 315-320). Materials Research Society.