Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD

Jin Zhong Wang, Guo Tong Du, Xin Qiang Wang, Yu Chun Chang, Wei Yan, Shu Ren Yang, Yan Ma, Hai Song Wang, Ding San Gao, Xiang Liu, Hui Cao, Jun Ying Xu, R. P.H. Chang

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Abstract

ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalChinese Physics Letters
Volume19
Issue number4
DOIs
Publication statusPublished - Aug 19 2002

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wang, J. Z., Du, G. T., Wang, X. Q., Chang, Y. C., Yan, W., Yang, S. R., Ma, Y., Wang, H. S., Gao, D. S., Liu, X., Cao, H., Xu, J. Y., & Chang, R. P. H. (2002). Influences of annealing on the opto-electronic properties of ZnO films grown by plasma-enhanced MOCVD. Chinese Physics Letters, 19(4), 581-583. https://doi.org/10.1088/0256-307X/19/4/341