Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study

Victor I Klimov, Ch J. Schwarz, D. W. McBranch, C. W. White

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps.

Original languageEnglish
Pages (from-to)2603-2605
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number18
DOIs
Publication statusPublished - 1998

Fingerprint

energy bands
nanocrystals
ions
deactivation
trapping
traps
absorption spectra
decay

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Initial carrier relaxation dynamics in ion-implanted Si nanocrystals : Femtosecond transient absorption study. / Klimov, Victor I; Schwarz, Ch J.; McBranch, D. W.; White, C. W.

In: Applied Physics Letters, Vol. 73, No. 18, 1998, p. 2603-2605.

Research output: Contribution to journalArticle

Klimov, Victor I ; Schwarz, Ch J. ; McBranch, D. W. ; White, C. W. / Initial carrier relaxation dynamics in ion-implanted Si nanocrystals : Femtosecond transient absorption study. In: Applied Physics Letters. 1998 ; Vol. 73, No. 18. pp. 2603-2605.
@article{a022b8fbdaa840d0bbbda42a03b5c6b9,
title = "Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study",
abstract = "Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps.",
author = "Klimov, {Victor I} and Schwarz, {Ch J.} and McBranch, {D. W.} and White, {C. W.}",
year = "1998",
doi = "10.1063/1.122519",
language = "English",
volume = "73",
pages = "2603--2605",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Initial carrier relaxation dynamics in ion-implanted Si nanocrystals

T2 - Femtosecond transient absorption study

AU - Klimov, Victor I

AU - Schwarz, Ch J.

AU - McBranch, D. W.

AU - White, C. W.

PY - 1998

Y1 - 1998

N2 - Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps.

AB - Transient absorption spectra of ion-implanted Si nanocrystals (NCs) exhibit two picosecond photoinduced absorption features, attributed to carriers in NC quantized states (high-energy band) and Si/SiO2 interface states (low-energy band). Fast relaxation of the high-energy band indicates that populations of quantized states are short lived and decay on the sub-10-ps time scale due to efficient surface trapping. This shows that the red emission in our samples is not due to carriers in quantized states but rather is a result of deactivation of surface traps.

UR - http://www.scopus.com/inward/record.url?scp=0000762514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000762514&partnerID=8YFLogxK

U2 - 10.1063/1.122519

DO - 10.1063/1.122519

M3 - Article

AN - SCOPUS:0000762514

VL - 73

SP - 2603

EP - 2605

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -