We have investigated the initial growth of silicon oxynitride films on a clean Si(100) single crystal in a N2O ambient under ultrahigh vacuum conditions using Auger electron spectroscopy and nuclear reaction analysis. Variations in the growth parameters, e.g., exposure, N2O pressure and sample temperature, have been systematically investigated. Nitrogen incorporated in the oxynitride film is distributed in a region close to the film/substrate interface and most nitrogen is incorporated within a film thickness of ∼2.5 nm. These studies find an important application to the semiconductor industry with regard to possible new high quality gate oxide materials.
ASJC Scopus subject areas
- Physics and Astronomy(all)