Abstract
A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
Original language | English |
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Pages (from-to) | 144-146 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 52 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)