Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke-Allmang; Leonard C Feldman; S. Nakahara

doi:10.1063/1.99032

Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara

Rutgers University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

Original language	English
Pages (from-to)	144-146
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.99032
Publication status	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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