Abstract
A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
| Original language | English |
|---|---|
| Pages (from-to) | 144-146 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 52 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1988 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Initial stages of epitaxial growth : Gallium arsenide on silicon. / Zinke-Allmang, M.; Feldman, Leonard C; Nakahara, S.
In: Applied Physics Letters, Vol. 52, No. 2, 1988, p. 144-146.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Initial stages of epitaxial growth
T2 - Gallium arsenide on silicon
AU - Zinke-Allmang, M.
AU - Feldman, Leonard C
AU - Nakahara, S.
PY - 1988
Y1 - 1988
N2 - A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
AB - A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
UR - http://www.scopus.com/inward/record.url?scp=36549091050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36549091050&partnerID=8YFLogxK
U2 - 10.1063/1.99032
DO - 10.1063/1.99032
M3 - Article
AN - SCOPUS:36549091050
VL - 52
SP - 144
EP - 146
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
ER -