Abstract
A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
| Original language | English |
|---|---|
| Pages (from-to) | 144-146 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 52 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Zinke-Allmang, M., Feldman, L. C., & Nakahara, S. (1988). Initial stages of epitaxial growth: Gallium arsenide on silicon. Applied Physics Letters, 52(2), 144-146. https://doi.org/10.1063/1.99032