Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke-Allmang; Leonard C Feldman; S. Nakahara

doi:10.1063/1.99032

Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara

Rutgers University

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

Original language	English
Pages (from-to)	144-146
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.99032
Publication status	Published - 1988

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Zinke-Allmang, M., Feldman, L. C., & Nakahara, S. (1988). Initial stages of epitaxial growth: Gallium arsenide on silicon. Applied Physics Letters, 52(2), 144-146. https://doi.org/10.1063/1.99032

@article{9b6e14dbb5ce4fc9974c7b0d0b064490,

title = "Initial stages of epitaxial growth: Gallium arsenide on silicon",

abstract = "A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.",

author = "M. Zinke-Allmang and Feldman, {Leonard C} and S. Nakahara",

year = "1988",

doi = "10.1063/1.99032",

language = "English",

volume = "52",

pages = "144--146",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Initial stages of epitaxial growth

T2 - Gallium arsenide on silicon

AU - Zinke-Allmang, M.

AU - Feldman, Leonard C

AU - Nakahara, S.

PY - 1988

Y1 - 1988

N2 - A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

AB - A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

UR - http://www.scopus.com/inward/record.url?scp=36549091050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549091050&partnerID=8YFLogxK

U2 - 10.1063/1.99032

DO - 10.1063/1.99032

M3 - Article

AN - SCOPUS:36549091050

VL - 52

SP - 144

EP - 146

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -

Access to Document

10.1063/1.99032