Initial stages of epitaxial growth

Gallium arsenide on silicon

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.

Original languageEnglish
Pages (from-to)144-146
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number2
DOIs
Publication statusPublished - 1988

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gallium
silicon
ion scattering
activation energy
transmission electron microscopy
atoms
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Initial stages of epitaxial growth : Gallium arsenide on silicon. / Zinke-Allmang, M.; Feldman, Leonard C; Nakahara, S.

In: Applied Physics Letters, Vol. 52, No. 2, 1988, p. 144-146.

Research output: Contribution to journalArticle

Zinke-Allmang, M. ; Feldman, Leonard C ; Nakahara, S. / Initial stages of epitaxial growth : Gallium arsenide on silicon. In: Applied Physics Letters. 1988 ; Vol. 52, No. 2. pp. 144-146.
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