Abstract
High-energy ion scattering and channeling and low-energy electron diffraction are used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to 10 A) during Si molecular-beam epitaxy. Changes in the geometry of the Si substrate surface (i.e., reordering) and of the Si overlayer are measured as a function of Si coverage, deposition temperature, and substrate reconstruction. It is found that room-temperature deposition reorders the Si(100)-2×1 substrate but not the Si(111)-7×7. This difference is discussed in terms of structural models for these surfaces. On both surfaces, however, deposition at 300 K results in a highly imperfect overlayer. To obtain high-quality growth, a deposition temperature of 790 K is needed for Si(111)-7×7 and of 570 K for Si(100)-2×1. The implications of these results with respect to molecular-beam epitaxy are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 6-11 |
| Number of pages | 6 |
| Journal | Physical Review B |
| Volume | 32 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1985 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Initial stages of silicon molecular-beam epitaxy : Effects of surface reconstruction. / Gossmann, H. J.; Feldman, Leonard C.
In: Physical Review B, Vol. 32, No. 1, 1985, p. 6-11.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Initial stages of silicon molecular-beam epitaxy
T2 - Effects of surface reconstruction
AU - Gossmann, H. J.
AU - Feldman, Leonard C
PY - 1985
Y1 - 1985
N2 - High-energy ion scattering and channeling and low-energy electron diffraction are used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to 10 A) during Si molecular-beam epitaxy. Changes in the geometry of the Si substrate surface (i.e., reordering) and of the Si overlayer are measured as a function of Si coverage, deposition temperature, and substrate reconstruction. It is found that room-temperature deposition reorders the Si(100)-2×1 substrate but not the Si(111)-7×7. This difference is discussed in terms of structural models for these surfaces. On both surfaces, however, deposition at 300 K results in a highly imperfect overlayer. To obtain high-quality growth, a deposition temperature of 790 K is needed for Si(111)-7×7 and of 570 K for Si(100)-2×1. The implications of these results with respect to molecular-beam epitaxy are discussed.
AB - High-energy ion scattering and channeling and low-energy electron diffraction are used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to 10 A) during Si molecular-beam epitaxy. Changes in the geometry of the Si substrate surface (i.e., reordering) and of the Si overlayer are measured as a function of Si coverage, deposition temperature, and substrate reconstruction. It is found that room-temperature deposition reorders the Si(100)-2×1 substrate but not the Si(111)-7×7. This difference is discussed in terms of structural models for these surfaces. On both surfaces, however, deposition at 300 K results in a highly imperfect overlayer. To obtain high-quality growth, a deposition temperature of 790 K is needed for Si(111)-7×7 and of 570 K for Si(100)-2×1. The implications of these results with respect to molecular-beam epitaxy are discussed.
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U2 - 10.1103/PhysRevB.32.6
DO - 10.1103/PhysRevB.32.6
M3 - Article
AN - SCOPUS:0001806839
VL - 32
SP - 6
EP - 11
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 1
ER -