Initial stages of silicon molecular-beam epitaxy

Effects of surface reconstruction

H. J. Gossmann, Leonard C Feldman

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

High-energy ion scattering and channeling and low-energy electron diffraction are used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to 10 A) during Si molecular-beam epitaxy. Changes in the geometry of the Si substrate surface (i.e., reordering) and of the Si overlayer are measured as a function of Si coverage, deposition temperature, and substrate reconstruction. It is found that room-temperature deposition reorders the Si(100)-2×1 substrate but not the Si(111)-7×7. This difference is discussed in terms of structural models for these surfaces. On both surfaces, however, deposition at 300 K results in a highly imperfect overlayer. To obtain high-quality growth, a deposition temperature of 790 K is needed for Si(111)-7×7 and of 570 K for Si(100)-2×1. The implications of these results with respect to molecular-beam epitaxy are discussed.

Original languageEnglish
Pages (from-to)6-11
Number of pages6
JournalPhysical Review B
Volume32
Issue number1
DOIs
Publication statusPublished - 1985

Fingerprint

Surface reconstruction
Silicon
Molecular beam epitaxy
molecular beam epitaxy
silicon
Substrates
Low energy electron diffraction
ion scattering
Temperature
electron diffraction
Scattering
Ions
temperature
Geometry
energy
room temperature
geometry

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Initial stages of silicon molecular-beam epitaxy : Effects of surface reconstruction. / Gossmann, H. J.; Feldman, Leonard C.

In: Physical Review B, Vol. 32, No. 1, 1985, p. 6-11.

Research output: Contribution to journalArticle

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