Abstract
We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
| Original language | English |
|---|---|
| Article number | 062101 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Oct 2 2014 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures. / Kim, Bongjun; Jang, Seonpil; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C; Dodabalapur, Ananth.
In: Applied Physics Letters, Vol. 104, No. 6, 062101, 02.10.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures
AU - Kim, Bongjun
AU - Jang, Seonpil
AU - Geier, Michael L.
AU - Prabhumirashi, Pradyumna L.
AU - Hersam, Mark C
AU - Dodabalapur, Ananth
PY - 2014/10/2
Y1 - 2014/10/2
N2 - We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
AB - We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.
UR - http://www.scopus.com/inward/record.url?scp=84902286397&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84902286397&partnerID=8YFLogxK
U2 - 10.1063/1.4864629
DO - 10.1063/1.4864629
M3 - Article
AN - SCOPUS:84902286397
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062101
ER -