Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Bongjun Kim; Seonpil Jang; Michael L. Geier; Pradyumna L. Prabhumirashi; Mark C. Hersam; Ananth Dodabalapur

doi:10.1063/1.4864629

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Bongjun Kim, Seonpil Jang, Michael L. Geier, Pradyumna L. Prabhumirashi, Mark C. Hersam, Ananth Dodabalapur

Northwestern University

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm² V^-1 s^-1 at low operating voltages (<5V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Original language	English
Article number	062101
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4864629
Publication status	Published - Oct 2 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures",

abstract = "We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (<5V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.",

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AU - Kim, Bongjun

AU - Jang, Seonpil

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AU - Prabhumirashi, Pradyumna L.

AU - Hersam, Mark C.

AU - Dodabalapur, Ananth

PY - 2014/10/2

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