Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Bongjun Kim, Seonpil Jang, Michael L. Geier, Pradyumna L. Prabhumirashi, Mark C Hersam, Ananth Dodabalapur

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Original languageEnglish
Article number062101
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
Publication statusPublished - Oct 2 2014

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inverters
zinc oxides
tin oxides
transistors
carbon nanotubes
oxides
hole mobility
electron mobility
field effect transistors
electric potential
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures. / Kim, Bongjun; Jang, Seonpil; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C; Dodabalapur, Ananth.

In: Applied Physics Letters, Vol. 104, No. 6, 062101, 02.10.2014.

Research output: Contribution to journalArticle

Kim, Bongjun ; Jang, Seonpil ; Geier, Michael L. ; Prabhumirashi, Pradyumna L. ; Hersam, Mark C ; Dodabalapur, Ananth. / Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures. In: Applied Physics Letters. 2014 ; Vol. 104, No. 6.
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