Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Bongjun Kim, Seonpil Jang, Michael L. Geier, Pradyumna L. Prabhumirashi, Mark C. Hersam, Ananth Dodabalapur

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Abstract

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm2 V-1 s-1 at low operating voltages (<5V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Original languageEnglish
Article number062101
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
Publication statusPublished - Oct 2 2014

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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