TY - JOUR
T1 - Inorganically functionalized PbS-CdS colloidal nanocrystals
T2 - Integration into amorphous chalcogenide glass and luminescent properties
AU - Kovalenko, Maksym V.
AU - Schaller, Richard D.
AU - Jarzab, Dorota
AU - Loi, Maria A.
AU - Talapin, Dmitri V.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/2/8
Y1 - 2012/2/8
N2 - Inorganic semiconductor nanocrystals (NCs) with bright, stable, and wavelength-tunable luminescence are very promising emitters for various photonic and optoelectronic applications. Recently developed strategies for inorganic surface capping of colloidal NCs using metal chalcogenide complexes have opened new perspectives for their applications. Here we report an all-inorganic surface functionalization of highly luminescent IR-emitting PbS-CdS NCs and studies of their luminescence properties. We show that inorganic capping allows simple low-temperature encapsulation of inorganic NCs into a solution-cast IR-transparent amorphous As 2S 3 matrix. The resulting all-inorganic thin films feature stable IR luminescence in the telecommunication wavelength region. The high optical dielectric constant of As 2S 3 also helps reduce the dielectric screening of the radiating field inside the quantum dot, enabling fast radiative recombination in PbS-CdS NCs.
AB - Inorganic semiconductor nanocrystals (NCs) with bright, stable, and wavelength-tunable luminescence are very promising emitters for various photonic and optoelectronic applications. Recently developed strategies for inorganic surface capping of colloidal NCs using metal chalcogenide complexes have opened new perspectives for their applications. Here we report an all-inorganic surface functionalization of highly luminescent IR-emitting PbS-CdS NCs and studies of their luminescence properties. We show that inorganic capping allows simple low-temperature encapsulation of inorganic NCs into a solution-cast IR-transparent amorphous As 2S 3 matrix. The resulting all-inorganic thin films feature stable IR luminescence in the telecommunication wavelength region. The high optical dielectric constant of As 2S 3 also helps reduce the dielectric screening of the radiating field inside the quantum dot, enabling fast radiative recombination in PbS-CdS NCs.
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U2 - 10.1021/ja2087689
DO - 10.1021/ja2087689
M3 - Article
C2 - 22239647
AN - SCOPUS:84856713966
VL - 134
SP - 2457
EP - 2460
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 5
ER -