Insulator to semimetal transition in graphene oxide

Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, Hokwon Kim, Manish Chhowalla

Research output: Contribution to journalArticle

424 Citations (Scopus)

Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

Original languageEnglish
Pages (from-to)15768-15771
Number of pages4
JournalJournal of Physical Chemistry C
Volume113
Issue number35
DOIs
Publication statusPublished - Sep 3 2009

Fingerprint

Metalloids
Graphite
metalloids
Oxides
Graphene
graphene
insulators
oxides
Electronic properties
Transport properties
transport properties
Semiconductor materials
electronics

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Insulator to semimetal transition in graphene oxide. / Eda, Goki; Mattevi, Cecilia; Yamaguchi, Hisato; Kim, Hokwon; Chhowalla, Manish.

In: Journal of Physical Chemistry C, Vol. 113, No. 35, 03.09.2009, p. 15768-15771.

Research output: Contribution to journalArticle

Eda, G, Mattevi, C, Yamaguchi, H, Kim, H & Chhowalla, M 2009, 'Insulator to semimetal transition in graphene oxide', Journal of Physical Chemistry C, vol. 113, no. 35, pp. 15768-15771. https://doi.org/10.1021/jp9051402
Eda, Goki ; Mattevi, Cecilia ; Yamaguchi, Hisato ; Kim, Hokwon ; Chhowalla, Manish. / Insulator to semimetal transition in graphene oxide. In: Journal of Physical Chemistry C. 2009 ; Vol. 113, No. 35. pp. 15768-15771.
@article{7b2f544d15a04e838ef7dec3c4c3d2c3,
title = "Insulator to semimetal transition in graphene oxide",
abstract = "Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.",
author = "Goki Eda and Cecilia Mattevi and Hisato Yamaguchi and Hokwon Kim and Manish Chhowalla",
year = "2009",
month = "9",
day = "3",
doi = "10.1021/jp9051402",
language = "English",
volume = "113",
pages = "15768--15771",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "35",

}

TY - JOUR

T1 - Insulator to semimetal transition in graphene oxide

AU - Eda, Goki

AU - Mattevi, Cecilia

AU - Yamaguchi, Hisato

AU - Kim, Hokwon

AU - Chhowalla, Manish

PY - 2009/9/3

Y1 - 2009/9/3

N2 - Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

AB - Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

UR - http://www.scopus.com/inward/record.url?scp=70349101206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349101206&partnerID=8YFLogxK

U2 - 10.1021/jp9051402

DO - 10.1021/jp9051402

M3 - Article

VL - 113

SP - 15768

EP - 15771

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 35

ER -