Insulator to semimetal transition in graphene oxide

Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, Hokwon Kim, Manish Chhowalla

Research output: Contribution to journalArticlepeer-review

470 Citations (Scopus)

Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.

Original languageEnglish
Pages (from-to)15768-15771
Number of pages4
JournalJournal of Physical Chemistry C
Volume113
Issue number35
DOIs
Publication statusPublished - Sep 3 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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