Integrated multilayer sputter-induced 45°YBa2Cu 3O7-x grain boundary junctions

B. V. Vuchic, K. L. Merkle, K. A. Dean, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

Research output: Contribution to journalArticle

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Abstract

A versatile multilayer technique has been developed to form 45°YBa 2Cu3O7-x [001] tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu 3O7-x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45°about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown.

Original languageEnglish
Pages (from-to)1013
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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grain boundaries
epitaxy
thin films
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Integrated multilayer sputter-induced 45°YBa2Cu 3O7-x grain boundary junctions. / Vuchic, B. V.; Merkle, K. L.; Dean, K. A.; Buchholz, D. B.; Chang, Robert P. H.; Marks, L. D.

In: Applied Physics Letters, Vol. 67, 1995, p. 1013.

Research output: Contribution to journalArticle

Vuchic, B. V. ; Merkle, K. L. ; Dean, K. A. ; Buchholz, D. B. ; Chang, Robert P. H. ; Marks, L. D. / Integrated multilayer sputter-induced 45°YBa2Cu 3O7-x grain boundary junctions. In: Applied Physics Letters. 1995 ; Vol. 67. pp. 1013.
@article{ff7f426e1f89440398cd20ce671e1222,
title = "Integrated multilayer sputter-induced 45°YBa2Cu 3O7-x grain boundary junctions",
abstract = "A versatile multilayer technique has been developed to form 45°YBa 2Cu3O7-x [001] tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu 3O7-x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45°about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown.",
author = "Vuchic, {B. V.} and Merkle, {K. L.} and Dean, {K. A.} and Buchholz, {D. B.} and Chang, {Robert P. H.} and Marks, {L. D.}",
year = "1995",
doi = "10.1063/1.114714",
language = "English",
volume = "67",
pages = "1013",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Integrated multilayer sputter-induced 45°YBa2Cu 3O7-x grain boundary junctions

AU - Vuchic, B. V.

AU - Merkle, K. L.

AU - Dean, K. A.

AU - Buchholz, D. B.

AU - Chang, Robert P. H.

AU - Marks, L. D.

PY - 1995

Y1 - 1995

N2 - A versatile multilayer technique has been developed to form 45°YBa 2Cu3O7-x [001] tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu 3O7-x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45°about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown.

AB - A versatile multilayer technique has been developed to form 45°YBa 2Cu3O7-x [001] tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu 3O7-x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45°about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown.

UR - http://www.scopus.com/inward/record.url?scp=2842612369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2842612369&partnerID=8YFLogxK

U2 - 10.1063/1.114714

DO - 10.1063/1.114714

M3 - Article

AN - SCOPUS:2842612369

VL - 67

SP - 1013

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -