Abstract
A real-space TB-LMTO-recursion method for electronic structure calculations is applied to the study of interacting extended and point defects in NiAl. Results of calculations for the pure intermetallic and with ternary additions (within a supercell model) show good agreement with band structure results. Further, electronic structure and total energy calculations of point (single impurity, M=Ti, V, Cr, Mn, Fe and Co) and planar defects such as anti-phase boundaries (APB) were carried out and the interaction between them was determined. We found that for the 1/2 〈111〉 {110} APB in NiAl, ternary additions occupy exclusively the 3d-metal sublattice and decrease the APB energy (except for Co). Finally, we employ TB-LMTO-REC to study the electronic structure of the most complex extended defect, a dislocation. We demonstrate for the 〈100〉 {010} edge dislocation in NiAl that: (i) quasi-localized states may exist as a result of specific lattice distortions in the dislocation core with a type of 'broken' bonds; (ii) the electronic structure changes appreciably in the process of dislocation motion; (iii) van-Hove singularities present in the ideal crystal may be shifted to EF as a result of the dipolar character of the deformations in the dislocation core.
Original language | English |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | MRS |
Pages | 143-148 |
Number of pages | 6 |
Volume | 491 |
Publication status | Published - 1998 |
Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 3 1997 |
Other
Other | Proceedings of the 1997 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 12/1/97 → 12/3/97 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials