Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

H. J. Gossmann, Leonard C Feldman

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θc≊1.15×10 15 cm-2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θc. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.

Original languageEnglish
Pages (from-to)1141-1143
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number17
DOIs
Publication statusPublished - 1986

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backscattering
diffusion coefficient
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces. / Gossmann, H. J.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 48, No. 17, 1986, p. 1141-1143.

Research output: Contribution to journalArticle

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