Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

H. J. Gossmann; Leonard C Feldman

doi:10.1063/1.96450

Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

H. J. Gossmann, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θ_c≊1.15×10 ¹⁵ cm^-2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θc. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.

Original language	English
Pages (from-to)	1141-1143
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	17
DOIs	https://doi.org/10.1063/1.96450
Publication status	Published - 1986

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backscattering

diffusion coefficient

temperature

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Gossmann, H. J., & Feldman, L. C. (1986). Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces. Applied Physics Letters, 48(17), 1141-1143. https://doi.org/10.1063/1.96450

Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces. / Gossmann, H. J.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 48, No. 17, 1986, p. 1141-1143.

Research output: Contribution to journal › Article

Gossmann, HJ & Feldman, LC 1986, 'Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces', Applied Physics Letters, vol. 48, no. 17, pp. 1141-1143. https://doi.org/10.1063/1.96450

Gossmann HJ, Feldman LC. Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces. Applied Physics Letters. 1986;48(17):1141-1143. https://doi.org/10.1063/1.96450

Gossmann, H. J. ; Feldman, Leonard C. / Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces. In: Applied Physics Letters. 1986 ; Vol. 48, No. 17. pp. 1141-1143.

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10.1063/1.96450