Abstract
Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θc≊1.15×10 15 cm-2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θ<θ c. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.
Original language | English |
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Pages (from-to) | 1141-1143 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 48 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)