Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

H. J. Gossmann, L. C. Feldman

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13 Citations (Scopus)


Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θc≊1.15×10 15 cm-2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θ<θ c. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.

Original languageEnglish
Pages (from-to)1141-1143
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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