Abstract
A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 117-122 |
| Number of pages | 6 |
| Volume | 11 |
| Edition | 4 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: Oct 8 2007 → Oct 10 2007 |
Other
| Other | 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting |
|---|---|
| Country | United States |
| City | Washington, DC |
| Period | 10/8/07 → 10/10/07 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Interface characterization in III-V CMOS nanoelectronics. / Goncharova, L. V.; Celik, O.; Gustafsson, T.; Garfunkel, Eric; Warusawithana, M.; Schlom, D. G.; Wen, H.; Santos, M. B.; Sayan, Safak; Tsai, Wilman; Goel, Niti.
ECS Transactions. Vol. 11 4. ed. 2007. p. 117-122.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Interface characterization in III-V CMOS nanoelectronics
AU - Goncharova, L. V.
AU - Celik, O.
AU - Gustafsson, T.
AU - Garfunkel, Eric
AU - Warusawithana, M.
AU - Schlom, D. G.
AU - Wen, H.
AU - Santos, M. B.
AU - Sayan, Safak
AU - Tsai, Wilman
AU - Goel, Niti
PY - 2007
Y1 - 2007
N2 - A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.
AB - A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.
UR - http://www.scopus.com/inward/record.url?scp=45249088756&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45249088756&partnerID=8YFLogxK
U2 - 10.1149/1.2779553
DO - 10.1149/1.2779553
M3 - Conference contribution
SN - 9781566775700
VL - 11
SP - 117
EP - 122
BT - ECS Transactions
ER -