Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D. G. Schlom, H. Wen, M. B. Santos, Safak Sayan, Wilman Tsai, Niti Goel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages117-122
Number of pages6
Edition4
DOIs
Publication statusPublished - Dec 1 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/8/0710/10/07

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Goncharova, L. V., Celik, O., Gustafsson, T., Garfunkel, E., Warusawithana, M., Schlom, D. G., Wen, H., Santos, M. B., Sayan, S., Tsai, W., & Goel, N. (2007). Interface characterization in III-V CMOS nanoelectronics. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 117-122). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779553