Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova, O. Celik, T. Gustafsson, Eric Garfunkel, M. Warusawithana, D. G. Schlom, H. Wen, M. B. Santos, Safak Sayan, Wilman Tsai, Niti Goel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.

Original languageEnglish
Title of host publicationECS Transactions
Pages117-122
Number of pages6
Volume11
Edition4
DOIs
Publication statusPublished - 2007
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 8 2007Oct 10 2007

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/8/0710/10/07

Fingerprint

Nanoelectronics
Defects
Substrates
Passivation
Transistors
Capacitance
Sulfur
Oxygen
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Goncharova, L. V., Celik, O., Gustafsson, T., Garfunkel, E., Warusawithana, M., Schlom, D. G., ... Goel, N. (2007). Interface characterization in III-V CMOS nanoelectronics. In ECS Transactions (4 ed., Vol. 11, pp. 117-122) https://doi.org/10.1149/1.2779553

Interface characterization in III-V CMOS nanoelectronics. / Goncharova, L. V.; Celik, O.; Gustafsson, T.; Garfunkel, Eric; Warusawithana, M.; Schlom, D. G.; Wen, H.; Santos, M. B.; Sayan, Safak; Tsai, Wilman; Goel, Niti.

ECS Transactions. Vol. 11 4. ed. 2007. p. 117-122.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goncharova, LV, Celik, O, Gustafsson, T, Garfunkel, E, Warusawithana, M, Schlom, DG, Wen, H, Santos, MB, Sayan, S, Tsai, W & Goel, N 2007, Interface characterization in III-V CMOS nanoelectronics. in ECS Transactions. 4 edn, vol. 11, pp. 117-122, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 10/8/07. https://doi.org/10.1149/1.2779553
Goncharova LV, Celik O, Gustafsson T, Garfunkel E, Warusawithana M, Schlom DG et al. Interface characterization in III-V CMOS nanoelectronics. In ECS Transactions. 4 ed. Vol. 11. 2007. p. 117-122 https://doi.org/10.1149/1.2779553
Goncharova, L. V. ; Celik, O. ; Gustafsson, T. ; Garfunkel, Eric ; Warusawithana, M. ; Schlom, D. G. ; Wen, H. ; Santos, M. B. ; Sayan, Safak ; Tsai, Wilman ; Goel, Niti. / Interface characterization in III-V CMOS nanoelectronics. ECS Transactions. Vol. 11 4. ed. 2007. pp. 117-122
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