@inproceedings{4ccafaa4b90c49b9bbe4250fb4aab456,
title = "Interface characterization in III-V CMOS nanoelectronics",
abstract = "A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.",
author = "Goncharova, {L. V.} and O. Celik and T. Gustafsson and E. Garfunkel and M. Warusawithana and Schlom, {D. G.} and H. Wen and Santos, {M. B.} and Safak Sayan and Wilman Tsai and Niti Goel",
year = "2007",
month = dec,
day = "1",
doi = "10.1149/1.2779553",
language = "English",
isbn = "9781566775700",
series = "ECS Transactions",
number = "4",
pages = "117--122",
booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",
edition = "4",
note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",
}