Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova; O. Celik; T. Gustafsson; E. Garfunkel; M. Warusawithana; D. G. Schlom; H. Wen; M. B. Santos; Safak Sayan; Wilman Tsai; Niti Goel

doi:10.1149/1.2779553

Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D. G. Schlom, H. Wen, M. B. Santos, Safak Sayan, Wilman Tsai, Niti Goel

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A central requirement in the integration of III-V substrates in highly scaled CMOS gate stacks is to develop an ability to assure that we create a high capacitance, high mobility transistor structure with a low concentration of defects. In this contribution, recent studies of the compositional profile and interdiffusion of high-K gate stacks on III-V substrates are reviewed Sulfur passivation methods have been explored to help ensure that the starting III-V surface (InGaAs in this case) has a low defect concentration. Diffusion processes associated with the introduction of oxygen-gettering metal gate materials will also be discussed.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	117-122
Number of pages	6
Edition	4
DOIs	https://doi.org/10.1149/1.2779553
Publication status	Published - Dec 1 2007
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: Oct 8 2007 → Oct 10 2007

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country	United States
City	Washington, DC
Period	10/8/07 → 10/10/07

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ASJC Scopus subject areas

Engineering(all)

Cite this

Goncharova, L. V., Celik, O., Gustafsson, T., Garfunkel, E., Warusawithana, M., Schlom, D. G., Wen, H., Santos, M. B., Sayan, S., Tsai, W., & Goel, N. (2007). Interface characterization in III-V CMOS nanoelectronics. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 117-122). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779553

Interface characterization in III-V CMOS nanoelectronics. / Goncharova, L. V.; Celik, O.; Gustafsson, T.; Garfunkel, E.; Warusawithana, M.; Schlom, D. G.; Wen, H.; Santos, M. B.; Sayan, Safak; Tsai, Wilman; Goel, Niti.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. p. 117-122 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goncharova, LV, Celik, O, Gustafsson, T, Garfunkel, E, Warusawithana, M, Schlom, DG, Wen, H, Santos, MB, Sayan, S, Tsai, W & Goel, N 2007, Interface characterization in III-V CMOS nanoelectronics. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 117-122, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 10/8/07. https://doi.org/10.1149/1.2779553

Goncharova, L. V. ; Celik, O. ; Gustafsson, T. ; Garfunkel, E. ; Warusawithana, M. ; Schlom, D. G. ; Wen, H. ; Santos, M. B. ; Sayan, Safak ; Tsai, Wilman ; Goel, Niti. / Interface characterization in III-V CMOS nanoelectronics. ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. pp. 117-122 (ECS Transactions; 4).

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Access to Document

10.1149/1.2779553