Abstract
Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.
Original language | English |
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Pages (from-to) | 2644-2649 |
Number of pages | 6 |
Journal | Energy and Environmental Science |
Volume | 8 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sep 1 2015 |
ASJC Scopus subject areas
- Environmental Chemistry
- Renewable Energy, Sustainability and the Environment
- Nuclear Energy and Engineering
- Pollution