Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

Xinghao Zhou, Rui Liu, Ke Sun, Dennis Friedrich, Matthew T. McDowell, Fan Yang, Stefan T. Omelchenko, Fadl H. Saadi, Adam C. Nielander, Sisir Yalamanchili, Kimberly M. Papadantonakis, Bruce S. Brunschwig, Nathan S. Lewis

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Abstract

Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.

Original languageEnglish
Pages (from-to)2644-2649
Number of pages6
JournalEnergy and Environmental Science
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 1 2015

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ASJC Scopus subject areas

  • Environmental Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Nuclear Energy and Engineering
  • Pollution

Cite this

Zhou, X., Liu, R., Sun, K., Friedrich, D., McDowell, M. T., Yang, F., Omelchenko, S. T., Saadi, F. H., Nielander, A. C., Yalamanchili, S., Papadantonakis, K. M., Brunschwig, B. S., & Lewis, N. S. (2015). Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. Energy and Environmental Science, 8(9), 2644-2649. https://doi.org/10.1039/c5ee01687h