Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide

Xinghao Zhou, Rui Liu, Ke Sun, Dennis Friedrich, Matthew T. McDowell, Fan Yang, Stefan T. Omelchenko, Fadl H. Saadi, Adam C. Nielander, Sisir Yalamanchili, Kimberly M. Papadantonakis, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.

Original languageEnglish
Pages (from-to)2644-2649
Number of pages6
JournalEnergy and Environmental Science
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 1 2015

Fingerprint

Sputter deposition
Atomic layer deposition
Ultrathin films
Photocurrents
cobalt
Sun
Oxides
Cobalt
Diodes
Current density
Lighting
oxide
engineering
Coatings
Oxidation
Electrodes
Water
coating
electrode
oxidation

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Environmental Chemistry
  • Pollution
  • Nuclear Energy and Engineering

Cite this

Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. / Zhou, Xinghao; Liu, Rui; Sun, Ke; Friedrich, Dennis; McDowell, Matthew T.; Yang, Fan; Omelchenko, Stefan T.; Saadi, Fadl H.; Nielander, Adam C.; Yalamanchili, Sisir; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Energy and Environmental Science, Vol. 8, No. 9, 01.09.2015, p. 2644-2649.

Research output: Contribution to journalArticle

Zhou, X, Liu, R, Sun, K, Friedrich, D, McDowell, MT, Yang, F, Omelchenko, ST, Saadi, FH, Nielander, AC, Yalamanchili, S, Papadantonakis, KM, Brunschwig, BS & Lewis, NS 2015, 'Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide', Energy and Environmental Science, vol. 8, no. 9, pp. 2644-2649. https://doi.org/10.1039/c5ee01687h
Zhou, Xinghao ; Liu, Rui ; Sun, Ke ; Friedrich, Dennis ; McDowell, Matthew T. ; Yang, Fan ; Omelchenko, Stefan T. ; Saadi, Fadl H. ; Nielander, Adam C. ; Yalamanchili, Sisir ; Papadantonakis, Kimberly M. ; Brunschwig, Bruce S. ; Lewis, Nathan S. / Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. In: Energy and Environmental Science. 2015 ; Vol. 8, No. 9. pp. 2644-2649.
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