Abstract
Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.
| Original language | English |
|---|---|
| Pages (from-to) | 2644-2649 |
| Number of pages | 6 |
| Journal | Energy and Environmental Science |
| Volume | 8 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sep 1 2015 |
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ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Environmental Chemistry
- Pollution
- Nuclear Energy and Engineering
Cite this
Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide. / Zhou, Xinghao; Liu, Rui; Sun, Ke; Friedrich, Dennis; McDowell, Matthew T.; Yang, Fan; Omelchenko, Stefan T.; Saadi, Fadl H.; Nielander, Adam C.; Yalamanchili, Sisir; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.
In: Energy and Environmental Science, Vol. 8, No. 9, 01.09.2015, p. 2644-2649.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide
AU - Zhou, Xinghao
AU - Liu, Rui
AU - Sun, Ke
AU - Friedrich, Dennis
AU - McDowell, Matthew T.
AU - Yang, Fan
AU - Omelchenko, Stefan T.
AU - Saadi, Fadl H.
AU - Nielander, Adam C.
AU - Yalamanchili, Sisir
AU - Papadantonakis, Kimberly M.
AU - Brunschwig, Bruce S.
AU - Lewis, Nathan S
PY - 2015/9/1
Y1 - 2015/9/1
N2 - Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.
AB - Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of ∼-240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ∼28 mA cm-2 at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions.
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U2 - 10.1039/c5ee01687h
DO - 10.1039/c5ee01687h
M3 - Article
VL - 8
SP - 2644
EP - 2649
JO - Energy and Environmental Science
JF - Energy and Environmental Science
SN - 1754-5692
IS - 9
ER -