Interface passivation for silicon dioxide layers on silicon carbide

Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO₂/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.