Interface passivation for silicon dioxide layers on silicon carbide

Sarit Dhar, Shurui Wang, John R. Williams, Sokrates T. Pantelides, Leonard C Feldman

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalMRS Bulletin
Volume30
Issue number4
Publication statusPublished - Apr 2005

Fingerprint

structural influence coefficients
Passivation
Silicon carbide
silicon carbides
Silicon Dioxide
passivity
field effect transistors
Silica
silicon dioxide
Electron mobility
MOSFET devices
Semiconductor materials
carrier mobility
electron mobility
metal oxide semiconductors
traps
inversions
Temperature
silicon carbide

Keywords

  • Channel mobility
  • Interface passivation
  • Interface states
  • Metal oxide semiconductor field-effect transistors
  • MOSFETs
  • Silicon carbide
  • Silicon dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Dhar, S., Wang, S., Williams, J. R., Pantelides, S. T., & Feldman, L. C. (2005). Interface passivation for silicon dioxide layers on silicon carbide. MRS Bulletin, 30(4), 288-292.

Interface passivation for silicon dioxide layers on silicon carbide. / Dhar, Sarit; Wang, Shurui; Williams, John R.; Pantelides, Sokrates T.; Feldman, Leonard C.

In: MRS Bulletin, Vol. 30, No. 4, 04.2005, p. 288-292.

Research output: Contribution to journalArticle

Dhar, S, Wang, S, Williams, JR, Pantelides, ST & Feldman, LC 2005, 'Interface passivation for silicon dioxide layers on silicon carbide', MRS Bulletin, vol. 30, no. 4, pp. 288-292.
Dhar S, Wang S, Williams JR, Pantelides ST, Feldman LC. Interface passivation for silicon dioxide layers on silicon carbide. MRS Bulletin. 2005 Apr;30(4):288-292.
Dhar, Sarit ; Wang, Shurui ; Williams, John R. ; Pantelides, Sokrates T. ; Feldman, Leonard C. / Interface passivation for silicon dioxide layers on silicon carbide. In: MRS Bulletin. 2005 ; Vol. 30, No. 4. pp. 288-292.
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