Abstract
Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.
| Original language | English |
|---|---|
| Pages (from-to) | 288-292 |
| Number of pages | 5 |
| Journal | MRS Bulletin |
| Volume | 30 |
| Issue number | 4 |
| Publication status | Published - Apr 2005 |
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Keywords
- Channel mobility
- Interface passivation
- Interface states
- Metal oxide semiconductor field-effect transistors
- MOSFETs
- Silicon carbide
- Silicon dioxide
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Interface passivation for silicon dioxide layers on silicon carbide. / Dhar, Sarit; Wang, Shurui; Williams, John R.; Pantelides, Sokrates T.; Feldman, Leonard C.
In: MRS Bulletin, Vol. 30, No. 4, 04.2005, p. 288-292.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interface passivation for silicon dioxide layers on silicon carbide
AU - Dhar, Sarit
AU - Wang, Shurui
AU - Williams, John R.
AU - Pantelides, Sokrates T.
AU - Feldman, Leonard C
PY - 2005/4
Y1 - 2005/4
N2 - Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.
AB - Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.
KW - Channel mobility
KW - Interface passivation
KW - Interface states
KW - Metal oxide semiconductor field-effect transistors
KW - MOSFETs
KW - Silicon carbide
KW - Silicon dioxide
UR - http://www.scopus.com/inward/record.url?scp=32844463750&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=32844463750&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:32844463750
VL - 30
SP - 288
EP - 292
JO - MRS Bulletin
JF - MRS Bulletin
SN - 0883-7694
IS - 4
ER -