Interface passivation for silicon dioxide layers on silicon carbide

Sarit Dhar, Shurui Wang, John R. Williams, Sokrates T. Pantelides, Leonard C. Feldman

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SIC interface critical to the development of SIC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility tor inversion-mode 4H-SIC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market tor devices that operate at 5 kV and below.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalMRS Bulletin
Volume30
Issue number4
DOIs
Publication statusPublished - Apr 2005

Keywords

  • Channel mobility
  • Interface passivation
  • Interface states
  • MOSFETs
  • Metal oxide semiconductor field-effect transistors
  • Silicon carbide
  • Silicon dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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