Interface passivation of silicon dioxide layers on silicon carbide

S. Dhar, S. T. Pantelides, Leonard C Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages236-237
Number of pages2
Volume2005
Publication statusPublished - 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005 → Dec 9 2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/05 → 12/9/05

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dhar, S., Pantelides, S. T., Feldman, L. C., Wang, S., Isaacs-Smith, T., & Williams, J. R. (2005). Interface passivation of silicon dioxide layers on silicon carbide. In 2005 International Semiconductor Device Research Symposium (Vol. 2005, pp. 236-237). [1596071]

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