Interface passivation of silicon dioxide layers on silicon carbide

S. Dhar; S. T. Pantelides; L. C. Feldman; S. Wang; T. Isaacs-Smith; J. R. Williams

Interface passivation of silicon dioxide layers on silicon carbide

S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	236-237
Number of pages	2
Publication status	Published - Dec 1 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: Dec 7 2005 → Dec 9 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Other

Other	2005 International Semiconductor Device Research Symposium
Country	United States
City	Bethesda, MD
Period	12/7/05 → 12/9/05

ASJC Scopus subject areas

Engineering(all)

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Cite this

Interface passivation of silicon dioxide layers on silicon carbide. / Dhar, S.; Pantelides, S. T.; Feldman, L. C.; Wang, S.; Isaacs-Smith, T.; Williams, J. R.

2005 International Semiconductor Device Research Symposium. 2005. p. 236-237 1596071 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dhar, S, Pantelides, ST, Feldman, LC, Wang, S, Isaacs-Smith, T & Williams, JR 2005, Interface passivation of silicon dioxide layers on silicon carbide. in 2005 International Semiconductor Device Research Symposium., 1596071, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 236-237, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.

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AU - Williams, J. R.

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