Interface passivation of silicon dioxide layers on silicon carbide

S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages236-237
Number of pages2
Publication statusPublished - Dec 1 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/0512/9/05

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dhar, S., Pantelides, S. T., Feldman, L. C., Wang, S., Isaacs-Smith, T., & Williams, J. R. (2005). Interface passivation of silicon dioxide layers on silicon carbide. In 2005 International Semiconductor Device Research Symposium (pp. 236-237). [1596071] (2005 International Semiconductor Device Research Symposium; Vol. 2005).