Interface reactions of high-κ Y2O3 gate oxides with Si

B. W. Busch, J. Kwo, M. Hong, J. P. Mannaerts, B. J. Sapjeta, W. H. Schulte, Eric Garfunkel, T. Gustafsson

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Abstract

Ultrathin Y2O3 films were electron beam evaporated in an ultrahigh vacuum onto Si(100) and investigated by high-resolution medium energy ion scattering. Selected films were capped in situ with amorphous Si. Uncapped films that were exposed to air prior to analysis contained excess oxygen compared to a stoichiometric Y2O3 film, and showed a 6-8 Å interfacial layer. Si uptake from the substrate occurred in these films after a 700 °C vacuum anneal, presumably by reacting with the excess oxygen. Si-capped Y2O3 films on the other hand were stoichiometric, and the substrate interface was sharp (≤2 Å), even after 900 °C vacuum anneals. No change was seen at the Y2O3 capping layer interface until ≥800 °C for vacuum anneals. These measurements indicate that control of the interface composition is not possible after exposure of ultrathin Y2O3 films to air.

Original languageEnglish
Pages (from-to)2447-2449
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number15
DOIs
Publication statusPublished - Oct 8 2001

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Busch, B. W., Kwo, J., Hong, M., Mannaerts, J. P., Sapjeta, B. J., Schulte, W. H., Garfunkel, E., & Gustafsson, T. (2001). Interface reactions of high-κ Y2O3 gate oxides with Si. Applied Physics Letters, 79(15), 2447-2449. https://doi.org/10.1063/1.1406989