Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC

G. Y. Chung, C. C. Tin, J. H. Won, J. R. Williams, K. McDonald, R. A. Weller, S. T. Pantelides, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We report the effect on SiO2/SiC interface state density and effective oxide charge of different Si:C ratios (0.12 to 0.55) used during the growth of n-4H and n-6H-SiC epitaxial layers. We also report the effects of post-growth re-oxidation anneals and post-metalization anneals on the interface state density for both n- and p-4H-SiC. The interface trap density near the conduction band and the effective oxide charge increase with increasing Si:C ratio for both polytypes; however, the n-4H polytype is found to have an order of magnitude higher interface trap density near the conduction band compared to n-6H-SiC. The effective oxide charge is also higher for n-4H polytype. The distribution of interface states for 4H-SiC (measured using n- and p-type material) is asymmetric, with a higher trap density near the conduction band. Post-growth re-oxidation in wet O2 at 950°C increases the interface trap density near the conduction for n-4H-SiC. Post-metalization annealing at 450°C in Ar for an Al gate metal results in a reduction of the effective oxide charge from 9.5×1011cm-2 to 3.5×1011cm-2. The effective oxide charge for n-4H samples with Mo gates decreases with increasing post metalization annealing temperature. Interface state densities are not affected by the post-metalization anneals in Ar.

Original languageEnglish
Title of host publicationIEEE Aerospace Conference Proceedings
Pages409-413
Number of pages5
Volume5
Publication statusPublished - 2000
Event2000 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 18 2000Mar 25 2000

Other

Other2000 IEEE Aerospace Conference
CountryUnited States
CityBig Sky, MT
Period3/18/003/25/00

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Interface states
Conduction bands
Oxides
Annealing
Oxidation
Epitaxial layers
Metals
Temperature

ASJC Scopus subject areas

  • Aerospace Engineering

Cite this

Chung, G. Y., Tin, C. C., Won, J. H., Williams, J. R., McDonald, K., Weller, R. A., ... Feldman, L. C. (2000). Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. In IEEE Aerospace Conference Proceedings (Vol. 5, pp. 409-413)

Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. / Chung, G. Y.; Tin, C. C.; Won, J. H.; Williams, J. R.; McDonald, K.; Weller, R. A.; Pantelides, S. T.; Feldman, Leonard C.

IEEE Aerospace Conference Proceedings. Vol. 5 2000. p. 409-413.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, GY, Tin, CC, Won, JH, Williams, JR, McDonald, K, Weller, RA, Pantelides, ST & Feldman, LC 2000, Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. in IEEE Aerospace Conference Proceedings. vol. 5, pp. 409-413, 2000 IEEE Aerospace Conference, Big Sky, MT, United States, 3/18/00.
Chung GY, Tin CC, Won JH, Williams JR, McDonald K, Weller RA et al. Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. In IEEE Aerospace Conference Proceedings. Vol. 5. 2000. p. 409-413
Chung, G. Y. ; Tin, C. C. ; Won, J. H. ; Williams, J. R. ; McDonald, K. ; Weller, R. A. ; Pantelides, S. T. ; Feldman, Leonard C. / Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC. IEEE Aerospace Conference Proceedings. Vol. 5 2000. pp. 409-413
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