Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

G. Y. Chung, J. R. Williams, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, S. T. Pantelides, O. W. Holland, Leonard C Feldman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Interface state density and channel mobility have been characterized for 4H-SiC MOSFETs fabricated with dry thermal oxides and subsequently passivated with nitric oxide. The interface trap density at 0.1eV below the conduction band edge decreases from approximately 8 × 1012 to 1 × 1012 eV-1 cm-2 following anneals in nitric oxide (NO) at 1175°C for 2h. The room temperature field effect channel mobility increases by an order of magnitude to approximately 35 cm2/Vs following the passivation anneal. The field effect channel mobility of passivated MOSFETs shows almost no change with increasing temperature, while the mobility for unpassivated devices increases with increasing temperature and is thermally activated (∼T1.9) due to decreased Coulomb scattering by electrons trapped at the acceptor-like interface states near the conduction band. Over the temperature range 300-473K, threshold voltage changes of about -0.8 and -3.7V, respectively, are observed for devices processed with and without NO passivation.

Original languageEnglish
Pages (from-to)399-403
Number of pages5
JournalApplied Surface Science
Volume184
Issue number1-4
DOIs
Publication statusPublished - Dec 12 2001

Fingerprint

Interface states
Nitric oxide
Passivation
passivity
Nitric Oxide
Nitrogen
nitric oxide
field effect transistors
Conduction bands
nitrogen
conduction bands
Threshold voltage
Temperature
Oxides
Temperature distribution
threshold voltage
Scattering
temperature
temperature distribution
Electrons

Keywords

  • Interface states
  • Mobility
  • MOSFETs
  • Nitration
  • Silicon carbide
  • Threshold voltage

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. / Chung, G. Y.; Williams, J. R.; Tin, C. C.; McDonald, K.; Farmer, D.; Chanana, R. K.; Pantelides, S. T.; Holland, O. W.; Feldman, Leonard C.

In: Applied Surface Science, Vol. 184, No. 1-4, 12.12.2001, p. 399-403.

Research output: Contribution to journalArticle

Chung, GY, Williams, JR, Tin, CC, McDonald, K, Farmer, D, Chanana, RK, Pantelides, ST, Holland, OW & Feldman, LC 2001, 'Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation', Applied Surface Science, vol. 184, no. 1-4, pp. 399-403. https://doi.org/10.1016/S0169-4332(01)00684-5
Chung GY, Williams JR, Tin CC, McDonald K, Farmer D, Chanana RK et al. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Applied Surface Science. 2001 Dec 12;184(1-4):399-403. https://doi.org/10.1016/S0169-4332(01)00684-5
Chung, G. Y. ; Williams, J. R. ; Tin, C. C. ; McDonald, K. ; Farmer, D. ; Chanana, R. K. ; Pantelides, S. T. ; Holland, O. W. ; Feldman, Leonard C. / Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. In: Applied Surface Science. 2001 ; Vol. 184, No. 1-4. pp. 399-403.
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