Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001)

L. V. Goncharova, D. G. Starodub, Eric Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, D. G. Schlom

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.

Original languageEnglish
Article number014912
JournalJournal of Applied Physics
Volume100
Issue number1
DOIs
Publication statusPublished - 2006

Fingerprint

thermal stability
desorption
thin films
strontium
disintegration
ion scattering
pinholes
temperature
silicates
molecular beam epitaxy
titanium
atomic force microscopy
vacuum
annealing
silicon
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Goncharova, L. V., Starodub, D. G., Garfunkel, E., Gustafsson, T., Vaithyanathan, V., Lettieri, J., & Schlom, D. G. (2006). Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001). Journal of Applied Physics, 100(1), [014912]. https://doi.org/10.1063/1.2206710

Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001). / Goncharova, L. V.; Starodub, D. G.; Garfunkel, Eric; Gustafsson, T.; Vaithyanathan, V.; Lettieri, J.; Schlom, D. G.

In: Journal of Applied Physics, Vol. 100, No. 1, 014912, 2006.

Research output: Contribution to journalArticle

Goncharova, LV, Starodub, DG, Garfunkel, E, Gustafsson, T, Vaithyanathan, V, Lettieri, J & Schlom, DG 2006, 'Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001)', Journal of Applied Physics, vol. 100, no. 1, 014912. https://doi.org/10.1063/1.2206710
Goncharova, L. V. ; Starodub, D. G. ; Garfunkel, Eric ; Gustafsson, T. ; Vaithyanathan, V. ; Lettieri, J. ; Schlom, D. G. / Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001). In: Journal of Applied Physics. 2006 ; Vol. 100, No. 1.
@article{84a58884e3704b8aa318b9b6b5ae5301,
title = "Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001)",
abstract = "We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.",
author = "Goncharova, {L. V.} and Starodub, {D. G.} and Eric Garfunkel and T. Gustafsson and V. Vaithyanathan and J. Lettieri and Schlom, {D. G.}",
year = "2006",
doi = "10.1063/1.2206710",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001)

AU - Goncharova, L. V.

AU - Starodub, D. G.

AU - Garfunkel, Eric

AU - Gustafsson, T.

AU - Vaithyanathan, V.

AU - Lettieri, J.

AU - Schlom, D. G.

PY - 2006

Y1 - 2006

N2 - We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.

AB - We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.

UR - http://www.scopus.com/inward/record.url?scp=33746215277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746215277&partnerID=8YFLogxK

U2 - 10.1063/1.2206710

DO - 10.1063/1.2206710

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014912

ER -