Abstract
We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.
| Original language | English |
|---|---|
| Article number | 014912 |
| Journal | Journal of Applied Physics |
| Volume | 100 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001). / Goncharova, L. V.; Starodub, D. G.; Garfunkel, Eric; Gustafsson, T.; Vaithyanathan, V.; Lettieri, J.; Schlom, D. G.
In: Journal of Applied Physics, Vol. 100, No. 1, 014912, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001)
AU - Goncharova, L. V.
AU - Starodub, D. G.
AU - Garfunkel, Eric
AU - Gustafsson, T.
AU - Vaithyanathan, V.
AU - Lettieri, J.
AU - Schlom, D. G.
PY - 2006
Y1 - 2006
N2 - We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.
AB - We have used medium energy ion scattering, temperature programmed desorption, and atomic force microscopy to study the interface composition and thermal stability of epitaxial strontium titanate thin films grown by molecular-beam epitaxy on Si (001). The composition of the interface between the film and the substrate was found to be very sensitive to the recrystallization temperature used during growth, varying from a strontium silicate phase when the recrystallization temperature is low to a Ti-rich phase for a higher recrystallization temperature. The films are stable towards annealing in vacuum up to ̃550 °C, where SrO desorption begins and the initially flat film starts to roughen. Significant film disintegration occurs at 850 °C, and is accompanied by SiO and SrO desorption, pinhole formation, and finally titanium diffusion into the silicon bulk.
UR - http://www.scopus.com/inward/record.url?scp=33746215277&partnerID=8YFLogxK
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U2 - 10.1063/1.2206710
DO - 10.1063/1.2206710
M3 - Article
VL - 100
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 014912
ER -