Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements

Sanghyun Ju, Sunkook Kim, Saeed Mohammadi, David B. Janes, Young Geun Ha, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

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Abstract

Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and Si O2 gate insulators were characterized by low-frequency noise and variable temperature current-voltage (I-V) measurements. According to the gate dependence of the noise amplitude, the extracted Hooge's constants (αH) are ∼3.3× 10-2 for SAND-based devices and ∼3.5× 10-1 for Si O2 -based devices. Temperature-dependent I-V studies show that the hysteresis of the transfer curves and the threshold voltage shifts of SAND-based devices are significantly smaller than those of Si O2 -based devices. These results demonstrate the improved SAND/ZnO NW interface quality (lower interface-trap states and defects) in comparison to those fabricated with Si O2.

Original languageEnglish
Article number022104
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
Publication statusPublished - 2008

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nanowires
transistors
low frequencies
noise temperature
temperature
threshold voltage
hysteresis
insulators
traps
shift
defects
electric potential
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements. / Ju, Sanghyun; Kim, Sunkook; Mohammadi, Saeed; Janes, David B.; Ha, Young Geun; Facchetti, Antonio; Marks, Tobin J.

In: Applied Physics Letters, Vol. 92, No. 2, 022104, 2008.

Research output: Contribution to journalArticle

Ju, Sanghyun ; Kim, Sunkook ; Mohammadi, Saeed ; Janes, David B. ; Ha, Young Geun ; Facchetti, Antonio ; Marks, Tobin J. / Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements. In: Applied Physics Letters. 2008 ; Vol. 92, No. 2.
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