Interface trap passivation for SiO 2/(0001̄) C-terminated 4H-SiC

S. Dhar, Leonard C Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

Interface trap passivation at the Si O2 carbon -terminated (000 1-) face of 4H-SiC utilizing nitridation and hydrogenation has been evaluated. The Si O2 SiC interface, created by dry thermal oxidation on the C face, shows appreciably higher interface state density near the conduction band compared to the (0001) Si face. A postoxidation anneal in nitric oxide followed by a postmetallization anneal in hydrogen results in dramatic reduction of the trap density by over an order of magnitude near the conduction band. The electrical measurements have been correlated with the interfacial chemistry.

Original languageEnglish
Article number014902
JournalJournal of Applied Physics
Volume98
Issue number1
DOIs
Publication statusPublished - Jul 1 2005

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passivity
traps
conduction bands
nitric oxide
electrical measurement
hydrogenation
chemistry
oxidation
carbon
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Interface trap passivation for SiO 2/(0001̄) C-terminated 4H-SiC. / Dhar, S.; Feldman, Leonard C; Wang, S.; Isaacs-Smith, T.; Williams, J. R.

In: Journal of Applied Physics, Vol. 98, No. 1, 014902, 01.07.2005.

Research output: Contribution to journalArticle

Dhar, S. ; Feldman, Leonard C ; Wang, S. ; Isaacs-Smith, T. ; Williams, J. R. / Interface trap passivation for SiO 2/(0001̄) C-terminated 4H-SiC. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 1.
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