Interface trap passivation for SiO 2/(0001̄) C-terminated 4H-SiC

S. Dhar; L. C. Feldman; S. Wang; T. Isaacs-Smith; J. R. Williams

doi:10.1063/1.1938270

Interface trap passivation for SiO ₂/(0001̄) C-terminated 4H-SiC

S. Dhar, L. C. Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Interface trap passivation at the Si O2 carbon -terminated (000 1-) face of 4H-SiC utilizing nitridation and hydrogenation has been evaluated. The Si O2 SiC interface, created by dry thermal oxidation on the C face, shows appreciably higher interface state density near the conduction band compared to the (0001) Si face. A postoxidation anneal in nitric oxide followed by a postmetallization anneal in hydrogen results in dramatic reduction of the trap density by over an order of magnitude near the conduction band. The electrical measurements have been correlated with the interfacial chemistry.

Original language	English
Article number	014902
Journal	Journal of Applied Physics
Volume	98
Issue number	1
DOIs	https://doi.org/10.1063/1.1938270
Publication status	Published - Jul 1 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1938270

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title = "Interface trap passivation for SiO 2/(000{\=1}) C-terminated 4H-SiC",

abstract = "Interface trap passivation at the Si O2 carbon -terminated (000 1-) face of 4H-SiC utilizing nitridation and hydrogenation has been evaluated. The Si O2 SiC interface, created by dry thermal oxidation on the C face, shows appreciably higher interface state density near the conduction band compared to the (0001) Si face. A postoxidation anneal in nitric oxide followed by a postmetallization anneal in hydrogen results in dramatic reduction of the trap density by over an order of magnitude near the conduction band. The electrical measurements have been correlated with the interfacial chemistry.",

author = "S. Dhar and Feldman, {L. C.} and S. Wang and T. Isaacs-Smith and Williams, {J. R.}",

note = "Funding Information: The authors wish to acknowledge financial support from DARPA via Contract No. N00014-02-1-0628 (Ingham Mack and John Zolper, technical managers). We are pleased to acknowledge useful discussions with S. Pantelides (Vanderbilt University), J. A. Copper (Purdue University), and L. M. Porter (Carnegie Mellon University).",

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AU - Wang, S.

AU - Isaacs-Smith, T.

AU - Williams, J. R.

N1 - Funding Information: The authors wish to acknowledge financial support from DARPA via Contract No. N00014-02-1-0628 (Ingham Mack and John Zolper, technical managers). We are pleased to acknowledge useful discussions with S. Pantelides (Vanderbilt University), J. A. Copper (Purdue University), and L. M. Porter (Carnegie Mellon University).

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