Interface trap passivation for SiO 2/(0001̄) C-terminated 4H-SiC

S. Dhar, L. C. Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


Interface trap passivation at the Si O2 carbon -terminated (000 1-) face of 4H-SiC utilizing nitridation and hydrogenation has been evaluated. The Si O2 SiC interface, created by dry thermal oxidation on the C face, shows appreciably higher interface state density near the conduction band compared to the (0001) Si face. A postoxidation anneal in nitric oxide followed by a postmetallization anneal in hydrogen results in dramatic reduction of the trap density by over an order of magnitude near the conduction band. The electrical measurements have been correlated with the interfacial chemistry.

Original languageEnglish
Article number014902
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - Jul 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Interface trap passivation for SiO <sub>2</sub>/(0001̄) C-terminated 4H-SiC'. Together they form a unique fingerprint.

Cite this