Interfacial order in epitaxial NiSi2

K. C R Chiu, J. M. Poate, Leonard C Feldman, C. J. Doherty

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Abstract

High-quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing-angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single-crystal values and permit examination of the silicide-silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm 2.

Original languageEnglish
Pages (from-to)544-547
Number of pages4
JournalApplied Physics Letters
Volume36
Issue number7
DOIs
Publication statusPublished - 1980

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chiu, K. C. R., Poate, J. M., Feldman, L. C., & Doherty, C. J. (1980). Interfacial order in epitaxial NiSi2 . Applied Physics Letters, 36(7), 544-547. https://doi.org/10.1063/1.91574