Interfacial order in epitaxial NiSi2

K. C R Chiu, J. M. Poate, Leonard C Feldman, C. J. Doherty

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

High-quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing-angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single-crystal values and permit examination of the silicide-silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm 2.

Original languageEnglish
Pages (from-to)544-547
Number of pages4
JournalApplied Physics Letters
Volume36
Issue number7
DOIs
Publication statusPublished - 1980

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backscattering
grazing
examination
single crystals
silicon
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chiu, K. C. R., Poate, J. M., Feldman, L. C., & Doherty, C. J. (1980). Interfacial order in epitaxial NiSi2 . Applied Physics Letters, 36(7), 544-547. https://doi.org/10.1063/1.91574

Interfacial order in epitaxial NiSi2 . / Chiu, K. C R; Poate, J. M.; Feldman, Leonard C; Doherty, C. J.

In: Applied Physics Letters, Vol. 36, No. 7, 1980, p. 544-547.

Research output: Contribution to journalArticle

Chiu, KCR, Poate, JM, Feldman, LC & Doherty, CJ 1980, 'Interfacial order in epitaxial NiSi2 ', Applied Physics Letters, vol. 36, no. 7, pp. 544-547. https://doi.org/10.1063/1.91574
Chiu, K. C R ; Poate, J. M. ; Feldman, Leonard C ; Doherty, C. J. / Interfacial order in epitaxial NiSi2 . In: Applied Physics Letters. 1980 ; Vol. 36, No. 7. pp. 544-547.
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