Interfacial order in epitaxial NiSi2

K. C.R. Chiu, J. M. Poate, L. C. Feldman, C. J. Doherty

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


High-quality epitaxial NiSi2 films have been fabricated on 〈111〉 Si substrates and examined by grazing-angle Rutherford backscattering and channeling techniques. The channeled backscattering yields are close to single-crystal values and permit examination of the silicide-silicon interface. The yields indicate that the number of disordered Ni atoms at the interface must be less than 1.5×1015 Ni/cm 2.

Original languageEnglish
Pages (from-to)544-547
Number of pages4
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 1980

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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