Interfacial segregation in strained heterostructures

Boron in Si0.8Ge0.2/Si

N. Moriya, Leonard C Feldman, S. W. Downey, C. A. King, A. B. Emerson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Using a neutral atom mass spectrometry we have measured the value and temperature dependence of the boron segregation coefficient at the strained Si/Si0.8Ge0.2 interface. Segregation coefficients of 0.4 to 0.8 (Si/SiGe) are observed in the temperature range of 900 to 1200 K. The activation energy for the dopant segregation is measured to be 0.3 eV.

Original languageEnglish
Pages (from-to)1981-1983
Number of pages3
JournalPhysical Review Letters
Volume75
Issue number10
DOIs
Publication statusPublished - 1995

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boron
coefficients
neutral atoms
mass spectroscopy
activation energy
temperature dependence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Interfacial segregation in strained heterostructures : Boron in Si0.8Ge0.2/Si. / Moriya, N.; Feldman, Leonard C; Downey, S. W.; King, C. A.; Emerson, A. B.

In: Physical Review Letters, Vol. 75, No. 10, 1995, p. 1981-1983.

Research output: Contribution to journalArticle

Moriya, N. ; Feldman, Leonard C ; Downey, S. W. ; King, C. A. ; Emerson, A. B. / Interfacial segregation in strained heterostructures : Boron in Si0.8Ge0.2/Si. In: Physical Review Letters. 1995 ; Vol. 75, No. 10. pp. 1981-1983.
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