Intermetallic compounds with near Zintl phase behavior: RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium

James R. Salvador, Daniel Bilc, Jeffrey R. Gour, Subhendra D. Mahanti, Mercouri G Kanatzidis

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Abstract

A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) Å, b = 24.987(4) Å, and c = 5.9575(9) Å for La2Zn3Ge6, a = 5.9503(5) Å, b = 24.761(2) Å, and c = 5.9477(5) Å for the Ce analogue, a =5.938(2) Å, b = 24.708(8) Å, and c = 5.936(2) Å for Pr 2Zn3Ge6, and a = 5.9094(7) Å, b = 24.619(3) Å, and c = 5.9063(5) Å for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge11-x structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.

Original languageEnglish
Pages (from-to)8670-8679
Number of pages10
JournalInorganic Chemistry
Volume44
Issue number24
DOIs
Publication statusPublished - Nov 28 2005

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Metalloids
Indium
Magnetic variables measurement
Phase behavior
Band structure
Rare earths
Lattice constants
Intermetallics
Transition metals
intermetallics
indium
analogs
Semiconductor materials
metalloids
Liquids
liquids
magnetic measurement
lattice parameters
rare earth elements
transition metals

ASJC Scopus subject areas

  • Inorganic Chemistry

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Intermetallic compounds with near Zintl phase behavior : RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium. / Salvador, James R.; Bilc, Daniel; Gour, Jeffrey R.; Mahanti, Subhendra D.; Kanatzidis, Mercouri G.

In: Inorganic Chemistry, Vol. 44, No. 24, 28.11.2005, p. 8670-8679.

Research output: Contribution to journalArticle

Salvador, James R. ; Bilc, Daniel ; Gour, Jeffrey R. ; Mahanti, Subhendra D. ; Kanatzidis, Mercouri G. / Intermetallic compounds with near Zintl phase behavior : RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium. In: Inorganic Chemistry. 2005 ; Vol. 44, No. 24. pp. 8670-8679.
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abstract = "A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) {\AA}, b = 24.987(4) {\AA}, and c = 5.9575(9) {\AA} for La2Zn3Ge6, a = 5.9503(5) {\AA}, b = 24.761(2) {\AA}, and c = 5.9477(5) {\AA} for the Ce analogue, a =5.938(2) {\AA}, b = 24.708(8) {\AA}, and c = 5.936(2) {\AA} for Pr 2Zn3Ge6, and a = 5.9094(7) {\AA}, b = 24.619(3) {\AA}, and c = 5.9063(5) {\AA} for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge11-x structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.",
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AB - A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE 2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) Å, b = 24.987(4) Å, and c = 5.9575(9) Å for La2Zn3Ge6, a = 5.9503(5) Å, b = 24.761(2) Å, and c = 5.9477(5) Å for the Ce analogue, a =5.938(2) Å, b = 24.708(8) Å, and c = 5.936(2) Å for Pr 2Zn3Ge6, and a = 5.9094(7) Å, b = 24.619(3) Å, and c = 5.9063(5) Å for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge11-x structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.

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