Interplay of topological surface and bulk electronic states in Bi 2Se3

Megan Romanowich, Mal Soon Lee, Duck Young Chung, S. D. Mahanti, Mercouri G Kanatzidis, Stuart H. Tessmer

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density-functional calculations using a slab model and analysis of the partial density of states show that the background is consistent with bulklike states with small amplitudes at the surface. The topological surface states coexist with bulklike states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulklike surface states.

Original languageEnglish
Article number085310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number8
DOIs
Publication statusPublished - Feb 15 2013

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Surface states
Electronic states
Scanning tunneling microscopy
Valence bands
electronics
Band structure
Electronic structure
Density functional theory
Cones
Scattering
shoulders
scanning tunneling microscopy
cones
slabs
insulators
electronic structure
valence
interference
Experiments
scattering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Interplay of topological surface and bulk electronic states in Bi 2Se3. / Romanowich, Megan; Lee, Mal Soon; Chung, Duck Young; Mahanti, S. D.; Kanatzidis, Mercouri G; Tessmer, Stuart H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 8, 085310, 15.02.2013.

Research output: Contribution to journalArticle

Romanowich, Megan ; Lee, Mal Soon ; Chung, Duck Young ; Mahanti, S. D. ; Kanatzidis, Mercouri G ; Tessmer, Stuart H. / Interplay of topological surface and bulk electronic states in Bi 2Se3. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 8.
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