Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating

M. Achermann, A. P. Bartko, J. A. Hollingsworth, Victor I Klimov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We study intraband carrier dynamics in elongated CdSe nanocrystals and observe that in the high-intensity regime, carrier heating through Auger recombination becomes very efficient, leading to a significant slowing down of carrier cooling dynamics.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference (QELS)
Pages507-509
Number of pages3
Volume1
Publication statusPublished - 2005
Event2005 Quantum Electronics and Laser Science Conference (QELS) - Baltimore, MD, United States
Duration: May 22 2005 → May 27 2005

Other

Other2005 Quantum Electronics and Laser Science Conference (QELS)
CountryUnited States
CityBaltimore, MD
Period5/22/05 → 5/27/05

Fingerprint

Semiconductor materials
Cooling
Heating
Nanocrystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Achermann, M., Bartko, A. P., Hollingsworth, J. A., & Klimov, V. I. (2005). Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating. In Quantum Electronics and Laser Science Conference (QELS) (Vol. 1, pp. 507-509). [QWF6]

Intraband carrier relaxation in semiconductor quantum rods : Competition between phonon-assisted cooling and Auger heating. / Achermann, M.; Bartko, A. P.; Hollingsworth, J. A.; Klimov, Victor I.

Quantum Electronics and Laser Science Conference (QELS). Vol. 1 2005. p. 507-509 QWF6.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Achermann, M, Bartko, AP, Hollingsworth, JA & Klimov, VI 2005, Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating. in Quantum Electronics and Laser Science Conference (QELS). vol. 1, QWF6, pp. 507-509, 2005 Quantum Electronics and Laser Science Conference (QELS), Baltimore, MD, United States, 5/22/05.
Achermann M, Bartko AP, Hollingsworth JA, Klimov VI. Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating. In Quantum Electronics and Laser Science Conference (QELS). Vol. 1. 2005. p. 507-509. QWF6
Achermann, M. ; Bartko, A. P. ; Hollingsworth, J. A. ; Klimov, Victor I. / Intraband carrier relaxation in semiconductor quantum rods : Competition between phonon-assisted cooling and Auger heating. Quantum Electronics and Laser Science Conference (QELS). Vol. 1 2005. pp. 507-509
@inproceedings{a8afeb9ea1aa46a9bcaabcd692a0bfd5,
title = "Intraband carrier relaxation in semiconductor quantum rods: Competition between phonon-assisted cooling and Auger heating",
abstract = "We study intraband carrier dynamics in elongated CdSe nanocrystals and observe that in the high-intensity regime, carrier heating through Auger recombination becomes very efficient, leading to a significant slowing down of carrier cooling dynamics.",
author = "M. Achermann and Bartko, {A. P.} and Hollingsworth, {J. A.} and Klimov, {Victor I}",
year = "2005",
language = "English",
isbn = "1557527962",
volume = "1",
pages = "507--509",
booktitle = "Quantum Electronics and Laser Science Conference (QELS)",

}

TY - GEN

T1 - Intraband carrier relaxation in semiconductor quantum rods

T2 - Competition between phonon-assisted cooling and Auger heating

AU - Achermann, M.

AU - Bartko, A. P.

AU - Hollingsworth, J. A.

AU - Klimov, Victor I

PY - 2005

Y1 - 2005

N2 - We study intraband carrier dynamics in elongated CdSe nanocrystals and observe that in the high-intensity regime, carrier heating through Auger recombination becomes very efficient, leading to a significant slowing down of carrier cooling dynamics.

AB - We study intraband carrier dynamics in elongated CdSe nanocrystals and observe that in the high-intensity regime, carrier heating through Auger recombination becomes very efficient, leading to a significant slowing down of carrier cooling dynamics.

UR - http://www.scopus.com/inward/record.url?scp=27144555310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27144555310&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:27144555310

SN - 1557527962

VL - 1

SP - 507

EP - 509

BT - Quantum Electronics and Laser Science Conference (QELS)

ER -

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