Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Robert P. H. Chang, A. T. Fiory

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

Original languageEnglish
Pages (from-to)1534-1536
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number22
DOIs
Publication statusPublished - 1986

Fingerprint

phosphorus oxides
germanium
aluminum oxides
inversions
ultrahigh vacuum
oxide films
phosphorus
disorders
glass

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films. / Chang, Robert P. H.; Fiory, A. T.

In: Applied Physics Letters, Vol. 49, No. 22, 1986, p. 1534-1536.

Research output: Contribution to journalArticle

@article{eca400f955a14523976e4881ddaa988b,
title = "Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films",
abstract = "Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.",
author = "Chang, {Robert P. H.} and Fiory, {A. T.}",
year = "1986",
doi = "10.1063/1.97273",
language = "English",
volume = "49",
pages = "1534--1536",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

AU - Chang, Robert P. H.

AU - Fiory, A. T.

PY - 1986

Y1 - 1986

N2 - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

AB - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

UR - http://www.scopus.com/inward/record.url?scp=20544435584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544435584&partnerID=8YFLogxK

U2 - 10.1063/1.97273

DO - 10.1063/1.97273

M3 - Article

VL - 49

SP - 1534

EP - 1536

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -