Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

R. P.H. Chang; A. T. Fiory

doi:10.1063/1.97273

Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

R. P.H. Chang, A. T. Fiory

Northwestern University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO₂ interfaces.

Original language	English
Pages (from-to)	1534-1536
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	22
DOIs	https://doi.org/10.1063/1.97273
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.97273

Fingerprint Dive into the research topics of 'Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films'. Together they form a unique fingerprint.

Cite this

@article{eca400f955a14523976e4881ddaa988b,

title = "Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films",

abstract = "Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.",

author = "Chang, {R. P.H.} and Fiory, {A. T.}",

year = "1986",

doi = "10.1063/1.97273",

language = "English",

volume = "49",

pages = "1534--1536",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

AU - Chang, R. P.H.

AU - Fiory, A. T.

PY - 1986

Y1 - 1986

N2 - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

AB - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

UR - http://www.scopus.com/inward/record.url?scp=20544435584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544435584&partnerID=8YFLogxK

U2 - 10.1063/1.97273

DO - 10.1063/1.97273

M3 - Article

AN - SCOPUS:20544435584

VL - 49

SP - 1534

EP - 1536

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -

Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this