Abstract
Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.
Original language | English |
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Pages (from-to) | 1534-1536 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 49 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)