Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Robert P. H. Chang; A. T. Fiory

doi:10.1063/1.97273

Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Robert P. H. Chang, A. T. Fiory

Northwestern University

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO₂ interfaces.

Original language	English
Pages (from-to)	1534-1536
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	22
DOIs	https://doi.org/10.1063/1.97273
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.97273

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Chang, R. P. H., & Fiory, A. T. (1986). Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films. Applied Physics Letters, 49(22), 1534-1536. https://doi.org/10.1063/1.97273

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