Abstract
Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 1534-1536 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 49 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 1986 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films. / Chang, Robert P. H.; Fiory, A. T.
In: Applied Physics Letters, Vol. 49, No. 22, 1986, p. 1534-1536.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films
AU - Chang, Robert P. H.
AU - Fiory, A. T.
PY - 1986
Y1 - 1986
N2 - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.
AB - Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.
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UR - http://www.scopus.com/inward/citedby.url?scp=20544435584&partnerID=8YFLogxK
U2 - 10.1063/1.97273
DO - 10.1063/1.97273
M3 - Article
AN - SCOPUS:20544435584
VL - 49
SP - 1534
EP - 1536
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
ER -