Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films

Robert P. H. Chang, A. T. Fiory

Research output: Contribution to journalArticle

9 Citations (Scopus)


Mixed aluminum-phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200°C) are found to yield low interface state densities near the band edges which are sufficient for observing both p- and n-channel-type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.

Original languageEnglish
Pages (from-to)1534-1536
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1986


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this