Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films

R. Mu, M. Wu, Y. C. Liu, A. Ueda, D. O. Henderson, A. B. Hmelo, L. C. Feldman

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A series experiments were conducted and reported here on how to employ quartz crystal microbalance (QCM) as a highly mass sensitive sensor to study a-Si film and Si nanocrystals oxidation under ambient oxygen. An experimental calibration procedure has been developed to prevent problems with QCM systems during routine study. With the help of pulsed laser deposition (PLD) technique, one can purposely deposit a thin layer of a heavy element as an in-situ calibrant which can be analyzed by RBS quantitatively for QCM. The errors resulted from manufacture's sensor, non-repeatable sensor mounting and handling, temperature cycling history from run to run and so on will be effectively eliminated. Our preliminary results indicate that the oxidation process of a-Si thin films has two stages. A fast oxidation associated with surface and near surface oxidation followed by a slow oxidation. The former is depends on the oxygen vapor pressure in the chamber and the later is oxygen diffusion controlled process.

Original languageEnglish
Pages (from-to)123-127
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume727
DOIs
Publication statusPublished - 2002
EventNanostructured Interfaces - San Francisco, CA, United States
Duration: Apr 2 2002Apr 4 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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