Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films

R. Mu, M. Wu, Y. C. Liu, A. Ueda, D. O. Henderson, A. B. Hmelo, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A series experiments were conducted and reported here on how to employ quartz crystal microbalance (QCM) as a highly mass sensitive sensor to study a-Si film and Si nanocrystals oxidation under ambient oxygen. An experimental calibration procedure has been developed to prevent problems with QCM systems during routine study. With the help of pulsed laser deposition (PLD) technique, one can purposely deposit a thin layer of a heavy element as an in-situ calibrant which can be analyzed by RBS quantitatively for QCM. The errors resulted from manufacture's sensor, non-repeatable sensor mounting and handling, temperature cycling history from run to run and so on will be effectively eliminated. Our preliminary results indicate that the oxidation process of a-Si thin films has two stages. A fast oxidation associated with surface and near surface oxidation followed by a slow oxidation. The former is depends on the oxygen vapor pressure in the chamber and the later is oxygen diffusion controlled process.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Plitzko, G. Duscher, Y. Zhu, H. Ichinose
Pages123-127
Number of pages5
Volume727
Publication statusPublished - 2002
EventNanostructured Interfaces - San Francisco, CA, United States
Duration: Apr 2 2002Apr 4 2002

Other

OtherNanostructured Interfaces
CountryUnited States
CitySan Francisco, CA
Period4/2/024/4/02

Fingerprint

Nanocrystalline silicon
Quartz crystal microbalances
Oxidation
Oxygen
Sensors
Pulsed laser deposition
Vapor pressure
Mountings
Nanocrystals
Deposits
Calibration
Thin films
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Mu, R., Wu, M., Liu, Y. C., Ueda, A., Henderson, D. O., Hmelo, A. B., & Feldman, L. C. (2002). Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films. In J. M. Plitzko, G. Duscher, Y. Zhu, & H. Ichinose (Eds.), Materials Research Society Symposium - Proceedings (Vol. 727, pp. 123-127)

Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films. / Mu, R.; Wu, M.; Liu, Y. C.; Ueda, A.; Henderson, D. O.; Hmelo, A. B.; Feldman, Leonard C.

Materials Research Society Symposium - Proceedings. ed. / J.M. Plitzko; G. Duscher; Y. Zhu; H. Ichinose. Vol. 727 2002. p. 123-127.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, R, Wu, M, Liu, YC, Ueda, A, Henderson, DO, Hmelo, AB & Feldman, LC 2002, Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films. in JM Plitzko, G Duscher, Y Zhu & H Ichinose (eds), Materials Research Society Symposium - Proceedings. vol. 727, pp. 123-127, Nanostructured Interfaces, San Francisco, CA, United States, 4/2/02.
Mu R, Wu M, Liu YC, Ueda A, Henderson DO, Hmelo AB et al. Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films. In Plitzko JM, Duscher G, Zhu Y, Ichinose H, editors, Materials Research Society Symposium - Proceedings. Vol. 727. 2002. p. 123-127
Mu, R. ; Wu, M. ; Liu, Y. C. ; Ueda, A. ; Henderson, D. O. ; Hmelo, A. B. ; Feldman, Leonard C. / Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films. Materials Research Society Symposium - Proceedings. editor / J.M. Plitzko ; G. Duscher ; Y. Zhu ; H. Ichinose. Vol. 727 2002. pp. 123-127
@inproceedings{e6530ec3aa6c43c1b5cb287e6d0089b3,
title = "Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films",
abstract = "A series experiments were conducted and reported here on how to employ quartz crystal microbalance (QCM) as a highly mass sensitive sensor to study a-Si film and Si nanocrystals oxidation under ambient oxygen. An experimental calibration procedure has been developed to prevent problems with QCM systems during routine study. With the help of pulsed laser deposition (PLD) technique, one can purposely deposit a thin layer of a heavy element as an in-situ calibrant which can be analyzed by RBS quantitatively for QCM. The errors resulted from manufacture's sensor, non-repeatable sensor mounting and handling, temperature cycling history from run to run and so on will be effectively eliminated. Our preliminary results indicate that the oxidation process of a-Si thin films has two stages. A fast oxidation associated with surface and near surface oxidation followed by a slow oxidation. The former is depends on the oxygen vapor pressure in the chamber and the later is oxygen diffusion controlled process.",
author = "R. Mu and M. Wu and Liu, {Y. C.} and A. Ueda and Henderson, {D. O.} and Hmelo, {A. B.} and Feldman, {Leonard C}",
year = "2002",
language = "English",
volume = "727",
pages = "123--127",
editor = "J.M. Plitzko and G. Duscher and Y. Zhu and H. Ichinose",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Investigation of oxidation process of ultrathin amorphous and/or nano-crystalline silicon films

AU - Mu, R.

AU - Wu, M.

AU - Liu, Y. C.

AU - Ueda, A.

AU - Henderson, D. O.

AU - Hmelo, A. B.

AU - Feldman, Leonard C

PY - 2002

Y1 - 2002

N2 - A series experiments were conducted and reported here on how to employ quartz crystal microbalance (QCM) as a highly mass sensitive sensor to study a-Si film and Si nanocrystals oxidation under ambient oxygen. An experimental calibration procedure has been developed to prevent problems with QCM systems during routine study. With the help of pulsed laser deposition (PLD) technique, one can purposely deposit a thin layer of a heavy element as an in-situ calibrant which can be analyzed by RBS quantitatively for QCM. The errors resulted from manufacture's sensor, non-repeatable sensor mounting and handling, temperature cycling history from run to run and so on will be effectively eliminated. Our preliminary results indicate that the oxidation process of a-Si thin films has two stages. A fast oxidation associated with surface and near surface oxidation followed by a slow oxidation. The former is depends on the oxygen vapor pressure in the chamber and the later is oxygen diffusion controlled process.

AB - A series experiments were conducted and reported here on how to employ quartz crystal microbalance (QCM) as a highly mass sensitive sensor to study a-Si film and Si nanocrystals oxidation under ambient oxygen. An experimental calibration procedure has been developed to prevent problems with QCM systems during routine study. With the help of pulsed laser deposition (PLD) technique, one can purposely deposit a thin layer of a heavy element as an in-situ calibrant which can be analyzed by RBS quantitatively for QCM. The errors resulted from manufacture's sensor, non-repeatable sensor mounting and handling, temperature cycling history from run to run and so on will be effectively eliminated. Our preliminary results indicate that the oxidation process of a-Si thin films has two stages. A fast oxidation associated with surface and near surface oxidation followed by a slow oxidation. The former is depends on the oxygen vapor pressure in the chamber and the later is oxygen diffusion controlled process.

UR - http://www.scopus.com/inward/record.url?scp=0036945665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036945665&partnerID=8YFLogxK

M3 - Conference contribution

VL - 727

SP - 123

EP - 127

BT - Materials Research Society Symposium - Proceedings

A2 - Plitzko, J.M.

A2 - Duscher, G.

A2 - Zhu, Y.

A2 - Ichinose, H.

ER -