Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection

Hao Li; Christos D. Malliakas; Zhifu Liu; John A. Peters; Maria Sebastian; Lidong Zhao; Duck Young Chung; Bruce W. Wessels; Mercouri G. Kanatzidis

doi:10.1021/cg501151r

Investigation of semi-insulating Cs₂Hg₆S₇and Cs₂Hg_6-xCd_xS₇ alloy for hard radiation detection

Hao Li, Christos D. Malliakas, Zhifu Liu, John A. Peters, Maria Sebastian, Lidong Zhao, Duck Young Chung, Bruce W. Wessels, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A new method is described to synthesize the semiconductor Cs₂Hg₆S₇ and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs₂Hg_6-xCd_xS₇ (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs₂Hg₆S₇ from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs₂Hg₆S₇ into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 10⁶ to 0.65 × 10⁸ Ω cm has been achieved. The carrier mobility-lifetime product of the Cs₂Hg₆S₇ crystals has been increased to 1.7 × 10^-3 cm²/V for electrons (μτ)_e and 2.4 × 10^-3 cm²/V for holes (μτ)_h (HgCl₂ doped). The measured (μτ)_e value is comparable to the commercial CdZnTe crystal while the (μτ)_h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs₂Hg₆S₇ crystals. (Graph Presented).

Original language	English
Pages (from-to)	5949-5956
Number of pages	8
Journal	Crystal Growth and Design
Volume	14
Issue number	11
DOIs	https://doi.org/10.1021/cg501151r
Publication status	Published - Nov 5 2014

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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Investigation of semi-insulating Cs₂Hg₆S₇and Cs₂Hg_6-xCd_xS₇ alloy for hard radiation detection. / Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Sebastian, Maria; Zhao, Lidong; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.

In: Crystal Growth and Design, Vol. 14, No. 11, 05.11.2014, p. 5949-5956.

Research output: Contribution to journal › Article › peer-review

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abstract = "A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).",

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AB - A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).

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