Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection

Hao Li, Christos D. Malliakas, Zhifu Liu, John A. Peters, Maria Sebastian, Lidong Zhao, Duck Young Chung, Bruce W. Wessels, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).

Original languageEnglish
Pages (from-to)5949-5956
Number of pages8
JournalCrystal Growth and Design
Volume14
Issue number11
DOIs
Publication statusPublished - Nov 5 2014

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Alloying
Radiation
Crystals
alloying
radiation
Doping (additives)
Single crystals
crystals
Mercuric Chloride
Crystal growth from melt
Bridgman method
Electrons
Carrier mobility
single crystals
Crystallization
carrier mobility
Crystal growth
Electronic properties
crystal growth
Energy gap

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection. / Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Sebastian, Maria; Zhao, Lidong; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.

In: Crystal Growth and Design, Vol. 14, No. 11, 05.11.2014, p. 5949-5956.

Research output: Contribution to journalArticle

Li, H, Malliakas, CD, Liu, Z, Peters, JA, Sebastian, M, Zhao, L, Chung, DY, Wessels, BW & Kanatzidis, MG 2014, 'Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection', Crystal Growth and Design, vol. 14, no. 11, pp. 5949-5956. https://doi.org/10.1021/cg501151r
Li, Hao ; Malliakas, Christos D. ; Liu, Zhifu ; Peters, John A. ; Sebastian, Maria ; Zhao, Lidong ; Chung, Duck Young ; Wessels, Bruce W. ; Kanatzidis, Mercouri G. / Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection. In: Crystal Growth and Design. 2014 ; Vol. 14, No. 11. pp. 5949-5956.
@article{25015548c87d431fbd6079556dbe6cc2,
title = "Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection",
abstract = "A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).",
author = "Hao Li and Malliakas, {Christos D.} and Zhifu Liu and Peters, {John A.} and Maria Sebastian and Lidong Zhao and Chung, {Duck Young} and Wessels, {Bruce W.} and Kanatzidis, {Mercouri G}",
year = "2014",
month = "11",
day = "5",
doi = "10.1021/cg501151r",
language = "English",
volume = "14",
pages = "5949--5956",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection

AU - Li, Hao

AU - Malliakas, Christos D.

AU - Liu, Zhifu

AU - Peters, John A.

AU - Sebastian, Maria

AU - Zhao, Lidong

AU - Chung, Duck Young

AU - Wessels, Bruce W.

AU - Kanatzidis, Mercouri G

PY - 2014/11/5

Y1 - 2014/11/5

N2 - A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).

AB - A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).

UR - http://www.scopus.com/inward/record.url?scp=84910068552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84910068552&partnerID=8YFLogxK

U2 - 10.1021/cg501151r

DO - 10.1021/cg501151r

M3 - Article

VL - 14

SP - 5949

EP - 5956

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 11

ER -