Abstract
A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).
| Original language | English |
|---|---|
| Pages (from-to) | 5949-5956 |
| Number of pages | 8 |
| Journal | Crystal Growth and Design |
| Volume | 14 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 5 2014 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
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Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection. / Li, Hao; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Sebastian, Maria; Zhao, Lidong; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.
In: Crystal Growth and Design, Vol. 14, No. 11, 05.11.2014, p. 5949-5956.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of semi-insulating Cs2Hg6S7and Cs2Hg6-xCdxS7 alloy for hard radiation detection
AU - Li, Hao
AU - Malliakas, Christos D.
AU - Liu, Zhifu
AU - Peters, John A.
AU - Sebastian, Maria
AU - Zhao, Lidong
AU - Chung, Duck Young
AU - Wessels, Bruce W.
AU - Kanatzidis, Mercouri G
PY - 2014/11/5
Y1 - 2014/11/5
N2 - A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).
AB - A new method is described to synthesize the semiconductor Cs2Hg6S7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs2Hg6-xCdxS7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs2Hg6S7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs2Hg6S7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 106 to 0.65 × 108 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs2Hg6S7 crystals has been increased to 1.7 × 10-3 cm2/V for electrons (μτ)e and 2.4 × 10-3 cm2/V for holes (μτ)h (HgCl2 doped). The measured (μτ)e value is comparable to the commercial CdZnTe crystal while the (μτ)h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs2Hg6S7 crystals. (Graph Presented).
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U2 - 10.1021/cg501151r
DO - 10.1021/cg501151r
M3 - Article
VL - 14
SP - 5949
EP - 5956
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 11
ER -