Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition

X. T. Ren, M. B. Huang, S. Amadon, W. A. Lanford, M. A. Morales Paliza, L. C. Feldman

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis.

Original languageEnglish
Pages (from-to)187-193
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume174
Issue number1-2
DOIs
Publication statusPublished - Mar 2001

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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