Abstract
Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis.
| Original language | English |
|---|---|
| Pages (from-to) | 187-193 |
| Number of pages | 7 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 174 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Mar 2001 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Ren, X. T., Huang, M. B., Amadon, S., Lanford, W. A., Morales Paliza, M. A., & Feldman, L. C. (2001). Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 174(1-2), 187-193. https://doi.org/10.1016/S0168-583X(00)00437-7