TY - JOUR
T1 - Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition
AU - Ren, X. T.
AU - Huang, M. B.
AU - Amadon, S.
AU - Lanford, W. A.
AU - Morales Paliza, M. A.
AU - Feldman, L. C.
PY - 2001/3
Y1 - 2001/3
N2 - Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis.
AB - Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis.
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U2 - 10.1016/S0168-583X(00)00437-7
DO - 10.1016/S0168-583X(00)00437-7
M3 - Article
AN - SCOPUS:0034819118
VL - 174
SP - 187
EP - 193
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -