Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition

X. T. Ren, M. B. Huang, S. Amadon, W. A. Lanford, M. A. Morales Paliza, Leonard C Feldman

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis.

Original languageEnglish
Pages (from-to)187-193
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Volume174
Issue number1-2
DOIs
Publication statusPublished - Mar 2001

Fingerprint

Rutherford backscattering spectroscopy
Pulsed laser deposition
Tin oxides
indium oxides
Indium
Ion beams
tin oxides
Oxide films
pulsed laser deposition
oxide films
backscattering
ion beams
X rays
Tin
high resolution
indium
Spectrometers
tin
x rays
spectrometers

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition. / Ren, X. T.; Huang, M. B.; Amadon, S.; Lanford, W. A.; Morales Paliza, M. A.; Feldman, Leonard C.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 174, No. 1-2, 03.2001, p. 187-193.

Research output: Contribution to journalArticle

Ren, X. T. ; Huang, M. B. ; Amadon, S. ; Lanford, W. A. ; Morales Paliza, M. A. ; Feldman, Leonard C. / Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition. In: Nuclear Inst. and Methods in Physics Research, B. 2001 ; Vol. 174, No. 1-2. pp. 187-193.
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