Ion-beam nano-smoothing of sapphire and silicon carbide surfaces

D. B. Fenner, V. DiFilippo, J. A. Bennett, T. G. Tetreault, Leonard C Feldman, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Significant reductions in the surface roughness of single-crystal wafers of sapphire and silicon carbide with microelectronic-grade high polish were observed when exposed to a gas-cluster ion beam (GCIB). Atomic-force microscopy revealed that the typical initial surfaces consisted of a fine but small, random roughness together with relatively large and sharp asperities. The latter were removed efficiently by GCIB. Smoothing process improvements are also reported. The SiC wafers have a high density of shallow scratch marks and these too were removed, with the average roughness Ra falling below 4 Å after the best process. Analysis of the SiC by Rutherford backscattering spectroscopy in channeling mode revealed that when the GCIB process was adjusted so that asperities and scratch marks were removed, there was no increase in near- and at-surface damage. In particular, no lattice damage was observed of the sort typically caused by ion implantation prior to annealing. Significantly, it was found that oxygen gas cluster ion beams provided superior results with SiC as compared with argon GCIB. Surface smoothing mechanisms are proposed to explain these results.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsE.J. Knystautas, W.P. Kirk, V. Browning
Pages17-24
Number of pages8
Volume4468
DOIs
Publication statusPublished - 2001
EventEngineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing - San Diego, CA, United States
Duration: Jul 30 2001Jul 31 2001

Other

OtherEngineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing
CountryUnited States
CitySan Diego, CA
Period7/30/017/31/01

Fingerprint

Sapphire
smoothing
Silicon carbide
silicon carbides
carbides
Ion beams
sapphire
ion beams
Gases
gases
Surface roughness
roughness
wafers
damage
Rutherford backscattering spectroscopy
falling
microelectronics
Microelectronics
Ion implantation
ion implantation

Keywords

  • Atomic force microscope
  • Channeling
  • Damage
  • Gas-cluster ion beam
  • Rutherford backscatter
  • Sapphire
  • Silicon carbide
  • Surface roughness

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Fenner, D. B., DiFilippo, V., Bennett, J. A., Tetreault, T. G., Feldman, L. C., & Feldman, L. C. (2001). Ion-beam nano-smoothing of sapphire and silicon carbide surfaces. In E. J. Knystautas, W. P. Kirk, & V. Browning (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4468, pp. 17-24) https://doi.org/10.1117/12.452556

Ion-beam nano-smoothing of sapphire and silicon carbide surfaces. / Fenner, D. B.; DiFilippo, V.; Bennett, J. A.; Tetreault, T. G.; Feldman, Leonard C; Feldman, L. C.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / E.J. Knystautas; W.P. Kirk; V. Browning. Vol. 4468 2001. p. 17-24.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fenner, DB, DiFilippo, V, Bennett, JA, Tetreault, TG, Feldman, LC & Feldman, LC 2001, Ion-beam nano-smoothing of sapphire and silicon carbide surfaces. in EJ Knystautas, WP Kirk & V Browning (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4468, pp. 17-24, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, San Diego, CA, United States, 7/30/01. https://doi.org/10.1117/12.452556
Fenner DB, DiFilippo V, Bennett JA, Tetreault TG, Feldman LC, Feldman LC. Ion-beam nano-smoothing of sapphire and silicon carbide surfaces. In Knystautas EJ, Kirk WP, Browning V, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4468. 2001. p. 17-24 https://doi.org/10.1117/12.452556
Fenner, D. B. ; DiFilippo, V. ; Bennett, J. A. ; Tetreault, T. G. ; Feldman, Leonard C ; Feldman, L. C. / Ion-beam nano-smoothing of sapphire and silicon carbide surfaces. Proceedings of SPIE - The International Society for Optical Engineering. editor / E.J. Knystautas ; W.P. Kirk ; V. Browning. Vol. 4468 2001. pp. 17-24
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