ION IMPLANTATION.

J. D. Sansbury; G. Carter; W. A. Grant; J. D. Haskell; G. A. Stephens; J. L. Merz; L. C. Feldman; E. A. Sadowski; W. M. Augustyniak; O. J. Marsh; H. L. Dunlap

ION IMPLANTATION.

J. D. Sansbury, G. Carter, W. A. Grant, J. D. Haskell, G. A. Stephens, J. L. Merz, L. C. Feldman, E. A. Sadowski, W. M. Augustyniak, O. J. Marsh, H. L. Dunlap

Rutgers University

Research output: Contribution to conference › Paper

26 Citations (Scopus)

Abstract

Following is the continuation of the list of titles and authors of 58 papers presented: Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide. By J. D. Sansbury and J. F. Gibbons. Radiation Damage by Implanted Ions in GaAs and GaP. By G. Carter, W. A. Grant, J. D. Haskell and G. A. Stephens. Ion Implantation of Bismuth into GaP: II. Channeling Studies. By L. C. Feldman, W. M. Augustyniak and J. L. Merz. Ion Implanted Junctions and Conducting Layers in SiC. By O. J. Marsh and H. L. Dunlap.

Original language	English
Publication status	Published - Jan 1 1971

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ASJC Scopus subject areas

Engineering(all)

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Sansbury, J. D., Carter, G., Grant, W. A., Haskell, J. D., Stephens, G. A., Merz, J. L., Feldman, L. C., Sadowski, E. A., Augustyniak, W. M., Marsh, O. J., & Dunlap, H. L. (1971). ION IMPLANTATION..

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abstract = "Following is the continuation of the list of titles and authors of 58 papers presented: Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide. By J. D. Sansbury and J. F. Gibbons. Radiation Damage by Implanted Ions in GaAs and GaP. By G. Carter, W. A. Grant, J. D. Haskell and G. A. Stephens. Ion Implantation of Bismuth into GaP: II. Channeling Studies. By L. C. Feldman, W. M. Augustyniak and J. L. Merz. Ion Implanted Junctions and Conducting Layers in SiC. By O. J. Marsh and H. L. Dunlap.",

author = "Sansbury, {J. D.} and G. Carter and Grant, {W. A.} and Haskell, {J. D.} and Stephens, {G. A.} and Merz, {J. L.} and Feldman, {L. C.} and Sadowski, {E. A.} and Augustyniak, {W. M.} and Marsh, {O. J.} and Dunlap, {H. L.}",

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TY - CONF

T1 - ION IMPLANTATION.

AU - Sansbury, J. D.

AU - Carter, G.

AU - Grant, W. A.

AU - Haskell, J. D.

AU - Stephens, G. A.

AU - Merz, J. L.

AU - Feldman, L. C.

AU - Sadowski, E. A.

AU - Augustyniak, W. M.

AU - Marsh, O. J.

AU - Dunlap, H. L.

PY - 1971/1/1

Y1 - 1971/1/1

N2 - Following is the continuation of the list of titles and authors of 58 papers presented: Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide. By J. D. Sansbury and J. F. Gibbons. Radiation Damage by Implanted Ions in GaAs and GaP. By G. Carter, W. A. Grant, J. D. Haskell and G. A. Stephens. Ion Implantation of Bismuth into GaP: II. Channeling Studies. By L. C. Feldman, W. M. Augustyniak and J. L. Merz. Ion Implanted Junctions and Conducting Layers in SiC. By O. J. Marsh and H. L. Dunlap.

AB - Following is the continuation of the list of titles and authors of 58 papers presented: Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide. By J. D. Sansbury and J. F. Gibbons. Radiation Damage by Implanted Ions in GaAs and GaP. By G. Carter, W. A. Grant, J. D. Haskell and G. A. Stephens. Ion Implantation of Bismuth into GaP: II. Channeling Studies. By L. C. Feldman, W. M. Augustyniak and J. L. Merz. Ion Implanted Junctions and Conducting Layers in SiC. By O. J. Marsh and H. L. Dunlap.

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M3 - Paper

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ER -

ION IMPLANTATION.

Abstract

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