ION IMPLANTATION IN SEMICONDUCTORS.

J. L. Merz, Leonard C Feldman, D. W. Mingay, W. M. Augustyniak, J. D. Haskell, W. A. Grant, G. A. Stephens, J. L. Whitton, A. W. Tinsley, G. Carter, M. J. Nobes, T. G. Williams, D. W. Palmer

Research output: Chapter in Book/Report/Conference proceedingChapter

11 Citations (Scopus)

Abstract

Following is a continuation of the list of titles and authors. Implantation of Bi into GaP III. Hot-Implant Behaviour. By J. L. Merz, L. C. Feldman, D. W. Mingay and W. M. Augustyniak. Influence of Various Parameters on Radiation Damage in GaP. By J. D. Haskell, W. A. Grant, G. A. Stephens and J. L. Whitton. Retention of Bi Ions Implanted in GaAs. By A. W. Tinsley, W. A. Grant, G. Carter and M. J. Nobes. Annealing Behaviour of Gallium Phosphide in the Region 110-500 degree K after 300 keV Neon Irradiation. By T. G. Williams and D. W. Palmer.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
Publication statusPublished - 1800

Fingerprint

Gallium phosphide
Neon
Radiation damage
Ion implantation
Irradiation
Annealing
Semiconductor materials
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Merz, J. L., Feldman, L. C., Mingay, D. W., Augustyniak, W. M., Haskell, J. D., Grant, W. A., ... Palmer, D. W. (1800). ION IMPLANTATION IN SEMICONDUCTORS. In Unknown Host Publication Title

ION IMPLANTATION IN SEMICONDUCTORS. / Merz, J. L.; Feldman, Leonard C; Mingay, D. W.; Augustyniak, W. M.; Haskell, J. D.; Grant, W. A.; Stephens, G. A.; Whitton, J. L.; Tinsley, A. W.; Carter, G.; Nobes, M. J.; Williams, T. G.; Palmer, D. W.

Unknown Host Publication Title. 1800.

Research output: Chapter in Book/Report/Conference proceedingChapter

Merz, JL, Feldman, LC, Mingay, DW, Augustyniak, WM, Haskell, JD, Grant, WA, Stephens, GA, Whitton, JL, Tinsley, AW, Carter, G, Nobes, MJ, Williams, TG & Palmer, DW 1800, ION IMPLANTATION IN SEMICONDUCTORS. in Unknown Host Publication Title.
Merz JL, Feldman LC, Mingay DW, Augustyniak WM, Haskell JD, Grant WA et al. ION IMPLANTATION IN SEMICONDUCTORS. In Unknown Host Publication Title. 1800
Merz, J. L. ; Feldman, Leonard C ; Mingay, D. W. ; Augustyniak, W. M. ; Haskell, J. D. ; Grant, W. A. ; Stephens, G. A. ; Whitton, J. L. ; Tinsley, A. W. ; Carter, G. ; Nobes, M. J. ; Williams, T. G. ; Palmer, D. W. / ION IMPLANTATION IN SEMICONDUCTORS. Unknown Host Publication Title. 1800.
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T1 - ION IMPLANTATION IN SEMICONDUCTORS.

AU - Merz, J. L.

AU - Feldman, Leonard C

AU - Mingay, D. W.

AU - Augustyniak, W. M.

AU - Haskell, J. D.

AU - Grant, W. A.

AU - Stephens, G. A.

AU - Whitton, J. L.

AU - Tinsley, A. W.

AU - Carter, G.

AU - Nobes, M. J.

AU - Williams, T. G.

AU - Palmer, D. W.

PY - 1800

Y1 - 1800

N2 - Following is a continuation of the list of titles and authors. Implantation of Bi into GaP III. Hot-Implant Behaviour. By J. L. Merz, L. C. Feldman, D. W. Mingay and W. M. Augustyniak. Influence of Various Parameters on Radiation Damage in GaP. By J. D. Haskell, W. A. Grant, G. A. Stephens and J. L. Whitton. Retention of Bi Ions Implanted in GaAs. By A. W. Tinsley, W. A. Grant, G. Carter and M. J. Nobes. Annealing Behaviour of Gallium Phosphide in the Region 110-500 degree K after 300 keV Neon Irradiation. By T. G. Williams and D. W. Palmer.

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