ION IMPLANTATION IN SEMICONDUCTORS.

J. L. Merz, LC Feldman, D. W. Mingay, W. M. Augustyniak, J. D. Haskell, W. A. Grant, G. A. Stephens, J. L. Whitton, A. W. Tinsley, G. Carter, M. J. Nobes, T. G. Williams, D. W. Palmer

Research output: Contribution to conferencePaperpeer-review

Abstract

Following is a continuation of the list of titles and authors. Implantation of Bi into GaP III. Hot-Implant Behaviour. By J. L. Merz, L. C. Feldman, D. W. Mingay and W. M. Augustyniak. Influence of Various Parameters on Radiation Damage in GaP. By J. D. Haskell, W. A. Grant, G. A. Stephens and J. L. Whitton. Retention of Bi Ions Implanted in GaAs. By A. W. Tinsley, W. A. Grant, G. Carter and M. J. Nobes. Annealing Behaviour of Gallium Phosphide in the Region 110-500 degree K after 300 keV Neon Irradiation. By T. G. Williams and D. W. Palmer.

Original languageEnglish
Publication statusPublished - Jan 1 2017

ASJC Scopus subject areas

  • Engineering(all)

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