Ion implantation of bismuth into GaP- 1, 2

JL MERZ JL, Leonard C Feldman, EA SADOWSKI EA, WM AUGUSTYNIAK WM

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Abstract

Photoluminescence from the bismuth isoelectronic trap implanted into GaP is investigated for various ion doses and annealing conditions. A thin coating of silicon oxide is found to be essential to prevent thermal decomposition of the implanted surface during annealing. The luminescence data are correlated with channeling experiments.

Original languageEnglish
Pages (from-to)285-291, 293
JournalRadiation Effects
Volume6
Issue number3-4
Publication statusPublished - Dec 1970

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

MERZ JL, JL., Feldman, L. C., SADOWSKI EA, EA., & AUGUSTYNIAK WM, WM. (1970). Ion implantation of bismuth into GaP- 1, 2. Radiation Effects, 6(3-4), 285-291, 293.