Photoluminescence from the bismuth isoelectronic trap implanted into GaP is investigated for various ion doses and annealing conditions. A thin coating of silicon oxide is found to be essential to prevent thermal decomposition of the implanted surface during annealing. The luminescence data are correlated with channeling experiments.
|Pages (from-to)||285-291, 293|
|Publication status||Published - Dec 1970|
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