Ion implantation of bismuth into GaP- 1, 2

JL MERZ JL, Leonard C Feldman, EA SADOWSKI EA, WM AUGUSTYNIAK WM

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Photoluminescence from the bismuth isoelectronic trap implanted into GaP is investigated for various ion doses and annealing conditions. A thin coating of silicon oxide is found to be essential to prevent thermal decomposition of the implanted surface during annealing. The luminescence data are correlated with channeling experiments.

Original languageEnglish
Pages (from-to)285-291, 293
JournalRadiation Effects
Volume6
Issue number3-4
Publication statusPublished - Dec 1970

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Bismuth
Ion implantation
bismuth
ion implantation
Annealing
annealing
Silicon oxides
silicon oxides
thermal decomposition
coating
Luminescence
Photoluminescence
Pyrolysis
traps
Ions
luminescence
photoluminescence
Coatings
dosage
ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

MERZ JL, JL., Feldman, L. C., SADOWSKI EA, EA., & AUGUSTYNIAK WM, WM. (1970). Ion implantation of bismuth into GaP- 1, 2. Radiation Effects, 6(3-4), 285-291, 293.

Ion implantation of bismuth into GaP- 1, 2. / MERZ JL, JL; Feldman, Leonard C; SADOWSKI EA, EA; AUGUSTYNIAK WM, WM.

In: Radiation Effects, Vol. 6, No. 3-4, 12.1970, p. 285-291, 293.

Research output: Contribution to journalArticle

MERZ JL, JL, Feldman, LC, SADOWSKI EA, EA & AUGUSTYNIAK WM, WM 1970, 'Ion implantation of bismuth into GaP- 1, 2', Radiation Effects, vol. 6, no. 3-4, pp. 285-291, 293.
MERZ JL JL, Feldman LC, SADOWSKI EA EA, AUGUSTYNIAK WM WM. Ion implantation of bismuth into GaP- 1, 2. Radiation Effects. 1970 Dec;6(3-4):285-291, 293.
MERZ JL, JL ; Feldman, Leonard C ; SADOWSKI EA, EA ; AUGUSTYNIAK WM, WM. / Ion implantation of bismuth into GaP- 1, 2. In: Radiation Effects. 1970 ; Vol. 6, No. 3-4. pp. 285-291, 293.
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