Ion implantation of bismuth into GaP- 1, 2

JL MERZ JL, Leonard C Feldman, EA SADOWSKI EA, WM AUGUSTYNIAK WM

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Photoluminescence from the bismuth isoelectronic trap implanted into GaP is investigated for various ion doses and annealing conditions. A thin coating of silicon oxide is found to be essential to prevent thermal decomposition of the implanted surface during annealing. The luminescence data are correlated with channeling experiments.

Original languageEnglish
Pages (from-to)285-291, 293
JournalRadiation Effects
Volume6
Issue number3-4
Publication statusPublished - Dec 1970

ASJC Scopus subject areas

  • Engineering(all)

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