Ion profiling of implanted dopants in Si (001) with excess vacancy concentration

M. Dalponte, H. Boudinov, L. V. Goncharova, T. Feng, E. Garfunkel, T. Gustafsson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.

Original languageEnglish
Title of host publicationCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS
Subtitle of host publication2007 International Conference on Frontiers of Characterization and Metrology
Pages137-141
Number of pages5
DOIs
Publication statusPublished - Oct 22 2007
EventCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States
Duration: Mar 27 2007Mar 29 2007

Publication series

NameAIP Conference Proceedings
Volume931
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
CountryUnited States
CityGaithersburg, MD
Period3/27/073/29/07

Keywords

  • Dopants
  • Ion scattering
  • Ultra-shallow junctions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Dalponte, M., Boudinov, H., Goncharova, L. V., Feng, T., Garfunkel, E., & Gustafsson, T. (2007). Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology (pp. 137-141). (AIP Conference Proceedings; Vol. 931). https://doi.org/10.1063/1.2799358