@inproceedings{6a9d48e3ac1f412ab0b049eb3f2f8a84,
title = "Ion profiling of implanted dopants in Si (001) with excess vacancy concentration",
abstract = "Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.",
keywords = "Dopants, Ion scattering, Ultra-shallow junctions",
author = "M. Dalponte and H. Boudinov and Goncharova, {L. V.} and T. Feng and E. Garfunkel and T. Gustafsson",
year = "2007",
month = oct
day = "22",
doi = "10.1063/1.2799358",
language = "English",
isbn = "0735404410",
series = "AIP Conference Proceedings",
pages = "137--141",
booktitle = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS",
note = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology ; Conference date: 27-03-2007 Through 29-03-2007",
}