Abstract
Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 137-141 |
| Number of pages | 5 |
| Volume | 931 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States Duration: Mar 27 2007 → Mar 29 2007 |
Other
| Other | CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology |
|---|---|
| Country | United States |
| City | Gaithersburg, MD |
| Period | 3/27/07 → 3/29/07 |
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Keywords
- Dopants
- Ion scattering
- Ultra-shallow junctions
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Feng, T.; Garfunkel, Eric; Gustafsson, T.
AIP Conference Proceedings. Vol. 931 2007. p. 137-141.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Ion profiling of implanted dopants in Si (001) with excess vacancy concentration
AU - Dalponte, M.
AU - Boudinov, H.
AU - Goncharova, L. V.
AU - Feng, T.
AU - Garfunkel, Eric
AU - Gustafsson, T.
PY - 2007
Y1 - 2007
N2 - Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.
AB - Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.
KW - Dopants
KW - Ion scattering
KW - Ultra-shallow junctions
UR - http://www.scopus.com/inward/record.url?scp=35348897841&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348897841&partnerID=8YFLogxK
U2 - 10.1063/1.2799358
DO - 10.1063/1.2799358
M3 - Conference contribution
AN - SCOPUS:35348897841
SN - 0735404410
SN - 9780735404410
VL - 931
SP - 137
EP - 141
BT - AIP Conference Proceedings
ER -