Ion profiling of implanted dopants in Si (001) with excess vacancy concentration

M. Dalponte, H. Boudinov, L. V. Goncharova, T. Feng, Eric Garfunkel, T. Gustafsson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages137-141
Number of pages5
Volume931
DOIs
Publication statusPublished - 2007
EventCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States
Duration: Mar 27 2007Mar 29 2007

Other

OtherCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
CountryUnited States
CityGaithersburg, MD
Period3/27/073/29/07

Fingerprint

annealing
ions
ion scattering
implantation
nitrogen
atmospheres
oxygen
atoms
energy

Keywords

  • Dopants
  • Ion scattering
  • Ultra-shallow junctions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dalponte, M., Boudinov, H., Goncharova, L. V., Feng, T., Garfunkel, E., & Gustafsson, T. (2007). Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. In AIP Conference Proceedings (Vol. 931, pp. 137-141) https://doi.org/10.1063/1.2799358

Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. / Dalponte, M.; Boudinov, H.; Goncharova, L. V.; Feng, T.; Garfunkel, Eric; Gustafsson, T.

AIP Conference Proceedings. Vol. 931 2007. p. 137-141.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dalponte, M, Boudinov, H, Goncharova, LV, Feng, T, Garfunkel, E & Gustafsson, T 2007, Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. in AIP Conference Proceedings. vol. 931, pp. 137-141, CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology, Gaithersburg, MD, United States, 3/27/07. https://doi.org/10.1063/1.2799358
Dalponte M, Boudinov H, Goncharova LV, Feng T, Garfunkel E, Gustafsson T. Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. In AIP Conference Proceedings. Vol. 931. 2007. p. 137-141 https://doi.org/10.1063/1.2799358
Dalponte, M. ; Boudinov, H. ; Goncharova, L. V. ; Feng, T. ; Garfunkel, Eric ; Gustafsson, T. / Ion profiling of implanted dopants in Si (001) with excess vacancy concentration. AIP Conference Proceedings. Vol. 931 2007. pp. 137-141
@inproceedings{6a9d48e3ac1f412ab0b049eb3f2f8a84,
title = "Ion profiling of implanted dopants in Si (001) with excess vacancy concentration",
abstract = "Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.",
keywords = "Dopants, Ion scattering, Ultra-shallow junctions",
author = "M. Dalponte and H. Boudinov and Goncharova, {L. V.} and T. Feng and Eric Garfunkel and T. Gustafsson",
year = "2007",
doi = "10.1063/1.2799358",
language = "English",
isbn = "0735404410",
volume = "931",
pages = "137--141",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Ion profiling of implanted dopants in Si (001) with excess vacancy concentration

AU - Dalponte, M.

AU - Boudinov, H.

AU - Goncharova, L. V.

AU - Feng, T.

AU - Garfunkel, Eric

AU - Gustafsson, T.

PY - 2007

Y1 - 2007

N2 - Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.

AB - Medium energy ion scattering (MEIS) was used to study the distribution of ion-implanted As and Sb dopants in Si with excess vacancies and SIMOX substrates as well as the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantation at high temperatures. Under these conditions, effects related to the different chemical nature of the pre-implanted species are expected. The annealing behavior and depth distribution of the Sb atoms differed for O compared to N pre-implanted Si. After long annealing times, the oxygen containing samples (SIMOX and O pre-implanted Si) presented higher substitutionality. The nitrogen pre-implanted Si presented the lowest amount of segregated Sb and a more uniform dopant distribution. For both N and O pre-implanted samples a large dopant loss to the atmosphere during annealing was observed.

KW - Dopants

KW - Ion scattering

KW - Ultra-shallow junctions

UR - http://www.scopus.com/inward/record.url?scp=35348897841&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35348897841&partnerID=8YFLogxK

U2 - 10.1063/1.2799358

DO - 10.1063/1.2799358

M3 - Conference contribution

AN - SCOPUS:35348897841

SN - 0735404410

SN - 9780735404410

VL - 931

SP - 137

EP - 141

BT - AIP Conference Proceedings

ER -