Abstract
High energy ion scattering, important in the evolving understanding of interfaces and epitaxial growth, has been treated in a number of reviews describing the fundamentals of this technique and its application. A guide to the existing literature and current directions of research is presented.
| Original language | English |
|---|---|
| Pages (from-to) | 51-54 |
| Number of pages | 4 |
| Journal | Ultramicroscopy |
| Volume | 14 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1984 |
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ASJC Scopus subject areas
- Materials Science(all)
- Instrumentation
Cite this
Ion scattering analysis of interfaces. / Feldman, Leonard C.
In: Ultramicroscopy, Vol. 14, No. 1-2, 1984, p. 51-54.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ion scattering analysis of interfaces
AU - Feldman, Leonard C
PY - 1984
Y1 - 1984
N2 - High energy ion scattering, important in the evolving understanding of interfaces and epitaxial growth, has been treated in a number of reviews describing the fundamentals of this technique and its application. A guide to the existing literature and current directions of research is presented.
AB - High energy ion scattering, important in the evolving understanding of interfaces and epitaxial growth, has been treated in a number of reviews describing the fundamentals of this technique and its application. A guide to the existing literature and current directions of research is presented.
UR - http://www.scopus.com/inward/record.url?scp=0021609777&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0021609777&partnerID=8YFLogxK
U2 - 10.1016/0304-3991(84)90106-2
DO - 10.1016/0304-3991(84)90106-2
M3 - Article
AN - SCOPUS:0021609777
VL - 14
SP - 51
EP - 54
JO - Ultramicroscopy
JF - Ultramicroscopy
SN - 0304-3991
IS - 1-2
ER -