Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis; D. G. Hall; J. Bevk; B. S. Freer; Leonard C Feldman; B. E. Weir

doi:10.1063/1.103523

Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, Leonard C Feldman, B. E. Weir

Rutgers University

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

We report the observation and characterization of luminescence in the wavelength range 1.1 μm

Original language	English
Pages (from-to)	954-956
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	10
DOIs	https://doi.org/10.1063/1.103523
Publication status	Published - 1990

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Modavis, R. A., Hall, D. G., Bevk, J., Freer, B. S., Feldman, L. C., & Weir, B. E. (1990). Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys. Applied Physics Letters, 57(10), 954-956. https://doi.org/10.1063/1.103523

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author = "Modavis, {R. A.} and Hall, {D. G.} and J. Bevk and Freer, {B. S.} and Feldman, {Leonard C} and Weir, {B. E.}",

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AU - Weir, B. E.

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10.1063/1.103523