Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, L. C. Feldman, B. E. Weir

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.

Original languageEnglish
Pages (from-to)954-956
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number10
DOIs
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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