Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis; D. G. Hall; J. Bevk; B. S. Freer; L. C. Feldman; B. E. Weir

doi:10.1063/1.103523

Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, L. C. Feldman, B. E. Weir

Rutgers University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.

Original language	English
Pages (from-to)	954-956
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	10
DOIs	https://doi.org/10.1063/1.103523
Publication status	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.",

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AU - Modavis, R. A.

AU - Hall, D. G.

AU - Bevk, J.

AU - Freer, B. S.

AU - Feldman, L. C.

AU - Weir, B. E.

PY - 1990

Y1 - 1990

N2 - We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.

AB - We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.

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JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

Abstract

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