Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys

R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, Leonard C Feldman, B. E. Weir

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the observation and characterization of luminescence in the wavelength range 1.1 μm

Original languageEnglish
Pages (from-to)954-956
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number10
DOIs
Publication statusPublished - 1990

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germanium alloys
silicon alloys
excitons
luminescence
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys. / Modavis, R. A.; Hall, D. G.; Bevk, J.; Freer, B. S.; Feldman, Leonard C; Weir, B. E.

In: Applied Physics Letters, Vol. 57, No. 10, 1990, p. 954-956.

Research output: Contribution to journalArticle

Modavis, RA, Hall, DG, Bevk, J, Freer, BS, Feldman, LC & Weir, BE 1990, 'Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys', Applied Physics Letters, vol. 57, no. 10, pp. 954-956. https://doi.org/10.1063/1.103523
Modavis, R. A. ; Hall, D. G. ; Bevk, J. ; Freer, B. S. ; Feldman, Leonard C ; Weir, B. E. / Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys. In: Applied Physics Letters. 1990 ; Vol. 57, No. 10. pp. 954-956.
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